POWER TRANSISTOR. BD941 Datasheet

BD941 TRANSISTOR. Datasheet pdf. Equivalent

Part BD941
Description SILICON POWER TRANSISTOR
Feature SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BD941 · www.datasheet.
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Datasheet
Download BD941 Datasheet



BD941
SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
BD941
DESCRIPTION
www.dat·aWshiethet4Tu.Oco-m220C package
·Low collector saturation voltage
APPLICATIONS
·For power switching applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
·
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
VCBO
VCEO
VEBO
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
IC Collector current
ICM Collector current-Peak
PC Collector dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
VALUE
140
140
7
3
6
30
150
-50~150
UNIT
V
V
V
A
A
W



BD941
SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
BD941
CHARACTERISTICS
Tj=25 unless otherwise specified
www.datasheet4u.com
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=10mA; IB=0
V(BR)EBO Emitter-base breakdown voltage
IE=1mA; IC=0
VCEsat Collector-emitter saturation voltage IC=1A; IB=0.2A
VBEsat
Base-emitter saturation voltage
IC=1A; IB=0.2A
ICBO Collector cut-off current
VCB=140V; IE=0
IEBO Emitter cut-off current
VEB=7V; IC=0
hFE-1
DC current gain
IC=0.2A ; VCE=4V
hFE-2
DC current gain
IC=1A ; VCE=4V
fT Transition frequency
IC=0.25A ; VCE=10V
MIN TYP. MAX UNIT
140 V
7V
0.7 V
1.5 V
50 µA
50 µA
40 250
15
3 MHz
2





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