POWER TRANSISTOR. BD941F Datasheet

BD941F TRANSISTOR. Datasheet pdf. Equivalent

Part BD941F
Description SILICON POWER TRANSISTOR
Feature SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BD941F www.datasheet4.
Manufacture SavantIC
Datasheet
Download BD941F Datasheet



BD941F
SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
BD941F
DESCRIPTION
www.data·sWheietht4uT.cOom-220F package
·Low collector saturation voltage
APPLICATIONS
·For power switching applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Fig.1 simplified outline (TO-220F) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
VCBO
VCEO
VEBO
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
IC Collector current
ICM Collector current-Peak
PC Collector dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
VALUE
140
140
7
3
6
14
150
-50~150
UNIT
V
V
V
A
A
W



BD941F
SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
BD941F
CHARACTERISTICS
Tj=25 unless otherwise specified
www.datasheet4u.com
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=10mA; IB=0
V(BR)EBO Emitter-base breakdown voltage
IE=1mA; IC=0
VCEsat Collector-emitter saturation voltage IC=1A; IB=0.2A
VBEsat
Base-emitter saturation voltage
IC=1A; IB=0.2A
ICBO Collector cut-off current
VCB=140V; IE=0
IEBO Emitter cut-off current
VEB=7V; IC=0
hFE-1
DC current gain
IC=0.2A ; VCE=4V
hFE-2
DC current gain
IC=1A ; VCE=4V
fT Transition frequency
IC=0.25A ; VCE=10V
MIN TYP. MAX UNIT
140 V
7V
0.7 V
1.5 V
50 µA
50 µA
40 250
15
3 MHz
2





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