POWER TRANSISTOR. BDT65C Datasheet

BDT65C TRANSISTOR. Datasheet pdf. Equivalent

Part BDT65C
Description SILICON POWER TRANSISTOR
Feature SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BDT65C www.datasheet4.
Manufacture SavantIC
Datasheet
Download BDT65C Datasheet



BDT65C
SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
BDT65C
DESCRIPTION
www.dat·aWshieteht4TuO.co-m220C package
·High DC Current Gain
·DARLINGTON
·Complement to type BDT64C
APPLICATIONS
·For audio output stages and general
purpose amplifier and switching
applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
IC Collector current-DC
PT Total power dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
VALUE
120
120
5
12
125
150
-55~150
UNIT
V
V
V
A
W



BDT65C
SavantIC Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
www.datasheet4u.com
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=30mA, IB=0
VCEsat-1 Collector-emitter saturation voltage IC=5A ,IB=20mA
VCEsat-2 Collector-emitter saturation voltage IC=10A ,IB=100mA
VBE Base-emitter on voltage
ICBO Collector cut-off current
ICEO Collector cut-off current
IC=5A ; VCE=4V
VCB=120V, IE=0
VCB=60V, IE=0;Tj=150
VCE=60V, IB=0
IEBO Emitter cut-off current
VEB=5V; IC=0
hFE-1
DC current gain
IC=1A ; VCE=4V
hFE-2
DC current gain
IC=5A ; VCE=4V
hFE-3
DC current gain
IC=12A ; VCE=4V
VF-1 Forward diode voltage
IF=5A
VF-2 Forward diode voltage
IF=12A
CC Collector capacitance
IE=0 ; VCB=10V;f=1MHz
ton Turn-on time
toff Turn-off time
IC=5A ,IBon=-IBoff=20mA
Product Specification
BDT65C
MIN TYP. MAX UNIT
120 V
2.0 V
3.0 V
2.5 V
0.4
2.0
mA
0.2 mA
5 mA
1500
1000
1000
2.0 V
2.0 V
200 pF
1.0 2.5 µs
6.0 10 µs
2





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