Power Transistors. BDT81 Datasheet

BDT81 Transistors. Datasheet pdf. Equivalent

Part BDT81
Description (BDT81 - BDT87) Silicon NPN Power Transistors
Feature INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors DESCRIPTION ·DC.
Manufacture Inchange Semiconductor
Datasheet
Download BDT81 Datasheet



BDT81
INCHANGE Semiconductor
isc Silicon NPN Power Transistors
DESCRIPTION
·DC Current
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Gain
-hFE
=
40(Min)@
IC=
5A
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 60V(Min)- BDT81; 80V(Min)- BDT83;
100V(Min)- BDT85; 120V(Min)- BDT87
·Complement to Type BDT82/84/86/88
APPLICATIONS
·Designed for use in audio output stages and general amplifer
and switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
BDT81
60
VCBO
Collector-Base Voltage
BDT83
BDT85
80
100
V
BDT87
120
BDT81
60
VCEO
BDT83
Collector-Emitter Voltage
BDT85
80
100
V
BDT87
120
VEBO
Emitter-Base Voltage
7V
IC Collector Current-Continuous
15 A
ICM Collector Current-Peak
20 A
IBB Base Current
PC
Collector Power Dissipation
TC=25
Tj Junction Temperature
Tstg Storage Temperature Range
4
125
150
-65~150
A
W
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Rth j-a
Thermal Resistance,Junction to Case
Thermal Resistance,Junction to Ambient
MAX
1
70
UNIT
/W
/W
isc Product Specification
BDT81/83/85/87
isc Websitewww.iscsemi.cn



BDT81
INCHANGE Semiconductor
isc Silicon NPN Power Transistors
isc Product Specification
BDT81/83/85/87
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
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SYMBOL
PARAMETER
CONDITIONS
BDT81
VCEO(SUS)
Collector-Emitter
Sustaining Voltage
BDT83
BDT85
IC= 30mA; IB= 0
BDT87
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 5A; IB=B 0.5A
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 7A; IB=B 0.7A
VBE(on) Base-Emitter On Voltage
IC= 5A ; VCE= 4V
ICES Collector Cutoff Current
VCE= 0.8VCBOmax; VBE= 0
ICBO Collector Cutoff Current
VCB= VCBOmax; IE= 0
IEBO Emitter Cutoff Current
VEB= 7V; IC= 0
hFE-1
DC Current Gain
IC= 50mA ; VCE= 10V
hFE-2
DC Current Gain
IC= 5A ; VCE= 4V
fT Current-Gain—Bandwidth Product IC= 0.5A ; VCE= 10V
Switching Times
ton Turn-On Time
toff Turn-Off Time
IC= 7A; IB1= -IB2= 0.7A
MIN TYP. MAX UNIT
60
80
V
100
120
1.0 V
1.6 V
1.5 V
1 mA
0.2 mA
0.1 mA
40
40
10 MHz
1 μs
2 μs
isc Websitewww.iscsemi.cn





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