Power Transistors. BDT81F Datasheet

BDT81F Transistors. Datasheet pdf. Equivalent

Part BDT81F
Description (BDT81F - BDT87F) Silicon NPN Power Transistors
Feature INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors DESCRIPTION ·DC.
Manufacture Inchange Semiconductor
Datasheet
Download BDT81F Datasheet



BDT81F
INCHANGE Semiconductor
isc Silicon NPN Power Transistors
isc Product Specification
BDT81F/83F/85F/87F
DESCRIPTION
·DC Current
www.datasheet4u.com
Gain
-hFE
=
40(Min)@
IC=
5A
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 60V(Min)- BDT81F; 80V(Min)- BDT83F;
100V(Min)- BDT85F; 120V(Min)- BDT87F
·Complement to Type BDT82F/84F/86F/88F
APPLICATIONS
·Designed for use in audio output stages and general amplifer
and switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
BDT81F
60
VCBO
Collector-Base Voltage
BDT83F
BDT85F
80
100
V
BDT87F
120
BDT81F
60
VCEO
BDT83F
Collector-Emitter Voltage
BDT85F
80
100
V
BDT87F
120
VEBO
Emitter-Base Voltage
7V
IC Collector Current-Continuous
15 A
ICM Collector Current-Peak
20 A
IBB Base Current
PC
Collector Power Dissipation
TC=25
Tj Junction Temperature
Tstg Storage Temperature Range
4
36
150
-65~150
A
W
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT
6 /W
isc Websitewww.iscsemi.cn



BDT81F
INCHANGE Semiconductor
isc Silicon NPN Power Transistors
isc Product Specification
BDT81F/83F/85F/87F
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
www.datasheet4u.com
SYMBOL
PARAMETER
CONDITIONS
BDT81F
VCEO(SUS)
Collector-Emitter
Sustaining Voltage
BDT83F
BDT85F
IC= 30mA; IB= 0
BDT87F
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 5A; IB=B 0.5A
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 7A; IB=B 0.7A
VBE(on) Base-Emitter On Voltage
IC= 5A ; VCE= 4V
ICES Collector Cutoff Current
VCE= 0.8VCBOmax; VBE= 0
ICBO Collector Cutoff Current
VCB= VCBOmax; IE= 0
IEBO Emitter Cutoff Current
VEB= 7V; IC= 0
hFE-1
DC Current Gain
IC= 50mA ; VCE= 10V
hFE-2
DC Current Gain
IC= 5A ; VCE= 4V
fT Current-Gain—Bandwidth Product IC= 0.5A ; VCE= 10V
Switching Times
ton Turn-On Time
toff Turn-Off Time
IC= 7A; IB1= -IB2= 0.7A
MIN TYP. MAX UNIT
60
80
V
100
120
1.0 V
1.6 V
1.5 V
1 mA
0.2 mA
0.1 mA
40
40
10 MHz
1 μs
2 μs
isc Websitewww.iscsemi.cn





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