BDT85F

isc Silicon NPN Power Transistors BDT81F/83F/85F/87F DESCRIPTION ·DC Current Gain -hFE = 40(Min)@ IC= 5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 60V(Min)- BDT81F; 80V(Min)- BDT83F; 100V(Min)- BDT85F; 120V(Min)- BDT87F ·Complement to Type BDT82F/84F/86F/88F ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in audio output stages and general amplifer and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE BDT81F 60 BDT83F 80 VCBO Collector-Base Voltage BDT85F 100 BDT87F 120 BDT81F 60 VCEO Collector-Emitter Voltage BDT83F 80 BDT85F 100 BDT87F 120 VEBO Emitter-Base Voltage 7 IC Collector Current-Continuous 15 ICM Collector Current-Peak 20 IB Base Current 4 PC Collector Power Dissipation TC=25℃ 36 Tj Junction Temperature 150 Tstg Storage Temperature Range -65~150 UNIT V V V A A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case isc website：www.iscsemi.com MAX UNIT 6 ℃/W 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors BDT81F/83F/85F/87F ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BDT81F VCEO(SUS) Collector-Emitter Sustaining Voltage BDT83F BDT85F IC= 30mA; IB= 0 VCE(sat)-1 VCE(sat)-2 VBE(on) BDT87F Collector-Emitter Voltage Collector-Emitter Voltage Saturation Saturation Base-Emitter On Voltage IC...