BDT84F

isc Silicon PNP Power Transistors BDT82F/84F/86F/88F DESCRIPTION ·DC Current Gain -hFE = 40(Min)@ IC= -5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -60V(Min)- BDT82F; -80V(Min)- BDT84F; -100V(Min)- BDT86F; -120V(Min)- BDT88F ·Complement to Type BDT81F/83F/85F/87F ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in audio output stages and general amplifer and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE BDT82F -60 VCBO Collector-Base Voltage BDT84F BDT86F -80 -100 BDT88F -120 BDT82F -60 VCEO Collector-Emitter Voltage BDT84F BDT86F -80 -100 BDT88F -120 VEBO Emitter-Base Voltage -7 IC Collector Current-Continuous -15 ICM Collector Current-Peak -20 IB Base Current -4 PC Collector Power Dissipation TC=25℃ 36 Tj Junction Temperature 150 Tstg Storage Temperature Range -65~150 UNIT V V V A A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 6 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistors BDT82F/84F/86F/88F ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BDT82F VCEO(SUS) Collector-Emitter Sustaining Voltage BDT84F BDT86F IC= -30mA; IB= 0 VCE(sat)-1 VCE(sat)-2 VBE(on) BDT88F Collector-Emitter Voltage Collector-Emitter Voltage Saturation IC= -5A; IB= -0.5A Satur...