BDW47

SavantIC Semiconductor Product Specification Silicon PNP Power Transistors BDW47 www.datasheet4u.com DESCRIPTION ·With TO-220C package ·Complement to type BDW42 ·DARLINGTON ·High DC current gain ·Low collector saturation voltage APPLICATIONS ·For general purpose and low speed switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC IB PD Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current-DC Base current Total power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE -100 -100 -5 -15 -0.5 85 150 -55~150 UNIT V V V A A W THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction to case MAX 1.47 UNIT /W SavantIC Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Output capacitance CONDITIONS IC=-30mA, IB=0 IC=-5A ,IB=-10mA IC=-10A ,IB=-50mA IC=-10A ; VCE=-4V VCB=-100V, IE=0 VCE=-50V, IB=0 VEB=-5V; IC=0 IC=-5A ; VCE=-4V IC=-10A ; VCE=-4V IC=-3A ; VCE=-3V;f=1MHz IE=0 ; VCB=-10V;f=0.1MHz 1000 250 4.0 MIN ...