BDW83C

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO-3PN package www.datasheet4u.com ·Complement to type BDW84/84A/84B/84C/84D ·DARLINGTON ·High DC current gain APPLICATIONS ·For use in power linear and switching applications. PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION BDW83/83A/83B/83C/83D Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings(Tc=25 ) SYMBOL PARAMETER BDW83 BDW83A VCBO Collector-base voltage BDW83B BDW83C BDW83D BDW83 BDW83A VCEO Collector-emitter voltage BDW83B BDW83C BDW83D VEBO IC IB PC Tj Tstg Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25 Ta=25 Open collector Open base Open emitter CONDITIONS VALUE 45 60 80 100 120 45 60 80 100 120 5 15 0.5 150 3.5 150 -65~150 V A A W V V UNIT SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER BDW83 BDW83A V(BR)CEO Collector-emitter breakdown voltage BDW83B BDW83C BDW83D VCEsat-1 VCEsat-2 VBE Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter on voltage BDW83 BDW83A ICBO Collector cut-off current BDW83B BDW83C BDW83D BDW83 BDW83A ICEO Collector cut-off current BDW83B BDW83C BDW83D IEBO hFE-1 hFE-2 VEC ton toff Emitter cut-off current DC current gain DC current gain Diode forward voltage Turn-on time Turn-off time IC=6A ,IB=...