BU508DW

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BU508DW www.datasheet4u.com DESCRIPTION ·With TO-247 package ·High voltage,high speed ·Built-in damper diode APPLICATIONS ·For use in horizontal deflection circuits of colour TV receivers. PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-247) and symbol DESCRIPTION ABSOLUTE MAXIMUM RATINGS(TC=25 ) SYMBOL VCBO VCEO IC ICP IB IBM Ptot Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Collector current (DC) Collector current (Pulse) Base current (DC) Base current (Pulse) Total power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base VALUE 1500 700 8 15 4 6 125 150 -65~150 UNIT V V A A A A W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Diode forward voltage Transition frequency Collector capacitance CONDITIONS IC=100mA ;IB=0,L=25mH IC=4.5A ;IB=1.6A IC=4.5A ;IB=2A VCE=1500V, VBE=0 Tj=125 VEB=5.0V; IC=0 IC=500mA ; VCE=5V IF=4.5A IE=0.1A ; VCE=5V VCB=10V;IE=0;f=1.0MHz 10 MIN 700 www.datasheet4u.com BU508DW SYMBOL VCEO(SUS) VCE(sat) VBE(sat) ICES IEBO hFE VF fT CC TYP. MAX UNIT V 1.0 1.1 1.0 2.0 300 30 1.6 7 125 2.0 V V mA mA V MHz pF 2 SavantIC Semiconduct...