BU931

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BU931 www.datasheet4u.com DESCRIPTION ·With TO-3 package ·High voltage ·DARLINGTON APPLICATIONS ·High ruggedness electronic ignitions. ·High voltage ignition coil driver PINNING(see fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings (Tc=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB IBM PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Base current (peak) Total power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 500 400 5 15 30 1 5 175 -65~200 -65~200 UNIT V V V A A A A W THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction to case MAX 1.0 UNIT /W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain Diode forward voltage CONDITIONS IC=0.1A; IB=0;L=10mH IC=7A;IB=70mA IC=8 A;IB=100mA IC=10 A;IB=250mA IC=7A;IB=70mA IC=8 A;IB=100mA IC=10A;IB=250m...