BU932R

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BU931R BU932R www.datasheet4u.com DESCRIPTION ·With TO-3 package ·DARLINGTON APPLICATIONS ·Automotive ignition applications ·Inverters circuits for motor controls PINNING (See Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO PARAMETER BU931R Collector-base voltage BU932R BU931R VCEO VEBO IC ICM IB IBM PT Tj Tstg Collector-emitter voltage BU932R Emitter-base voltage Collector current Collector current-peak Base current Base current-peak Total power dissipation Junction temperature Storage temperature TC125 Open collector Open base 500 5 15 30 1 5 175 200 -40~200 V A A A A W Open emitter 450 450 V CONDITIONS VALUE 400 V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case VALUE 1.0 UNIT /W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage BU931R IC=100mA ; IB=0 BU932R IC=7A; IB=70mA IC=8A; IB=100mA CONDITIONS www.datasheet4u.com BU931R BU932R SYMBOL MIN 400 TYP. MAX UNIT VCEO V 450 1.6 V VCEsat-1 Collector-emitter saturation Voltage Only for BU931R Collector-emitter saturation voltage BU931R BU932R VCEsat-2 1.8 IC=8A; IB=150mA IC=10A; IB=250mA IC=8A; IB=100mA 2.2 BU932R IC=8A; IB=150mA IC=10A; IB=250mA VCE=400V ;IB=0 1.0 BU932R BU931...