SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
BU931T
www.datasheet4u.com
DESCRIPTION ·...
SavantIC Semiconductor
Product Specification
Silicon
NPN Power
Transistors
BU931T
www.datasheet4u.com
DESCRIPTION ·With TO-220C package ·Fast switching speed ·DARLINGTON APPLICATIONS ·High ruggedness electronic ignitions.. ·High voltage ignition coil driver
PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION
Absolute maximum ratings (Ta=25 )
SYMBOL VCBO VCEO VEBO IC ICM IB IBM Ptot Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current (peak) Base current Base current Total power dissipation Max.operating junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 500 400 5 10 15 1 5 125 175 -65~175 UNIT V V V A A A A W
THERMAL CHARACTERISTICS
SYMBOL Rth j-case PARAMETER Thermal resistance junction case MAX 1.2 UNIT /W
SavantIC Semiconductor
Product Specification
Silicon
NPN Power
Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER CONDITIONS MIN TYP.
www.datasheet4u.com
BU931T
SYMBOL
MAX
UNIT
VCEO(SUS)
Collector-emitter sustaining voltage
IC=0.1 A ;IB=0;L=10mH
400
V
VCEsat-1
Collector-emitter saturation voltage
IC=7A ;IB=0.07A
1.6
V
VCEsat-2
Collector-emitter saturation voltage
IC=8A; IB=0.1 A
1.8
V
VBEsat-1
Base-emitter saturation voltage
IC=7A ;IB=0.07A
2.2
V
VBEsat-2
Base-emitter saturation voltage
IC=8A; IB=0.1 A VCE =500V; VBE=0; Tj=125 VCE =450V; IB=0; Tj=125 VEB=5V; IC=0
...