POWER TRANSISTOR. BU1506DX Datasheet

BU1506DX TRANSISTOR. Datasheet pdf. Equivalent

Part BU1506DX
Description SILICON POWER TRANSISTOR
Feature SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BU1506DX www.datashee.
Manufacture SavantIC
Datasheet
Download BU1506DX Datasheet



BU1506DX
SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
BU1506DX
DESCRIPTION
www.dat·aWshiethet4TuO.co-2m20F package
·High voltage
·High speed switching
·Built-in damper diode.
APPLICATIONS
·For use in horizontal deflection circuits
of colour TV receivers.
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector
Emitter
Fig.1 simplified outline (TO-220F) and symbol
Absolute maximum ratings (Ta=25 )
SYMBOL
PARAMETER
VCBO
VCEO
Collector-base voltage
Collector-emitter voltage
VEBO
IC
ICM
IB
IBM
Emitter-base voltage
Collector current
Collector current-peak
Base current
Base current-peak
PC Collector dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
VALUE
1500
700
7.5
5
8
3
8
32
150
-40~150
UNIT
V
V
V
A
A
A
A
W



BU1506DX
SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
BU1506DX
CHARACTERISTICS
www.datTasj=h2ee5t4u.ucnomless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)EBO Emitter-base breakdown voltage
IE=600mA ;IC=0
VCEO(SUS) Collector-emitter sustaining voltage IC=100mA ;IB=0;L=25mH
VCEsat Collector-emitter saturation voltage IC=3A; IB=0.79A
VBEsat
ICES
IEBO
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
IC=3A; IB=0.79A
VCE=rated;VBE=0
Tj=125
VEB=7.5V; IC=0
hFE-1
DC current gain
IC=0.3A ; VCE=5V
hFE-2
DC current gain
IC=3.0A ; VCE=5V
VF Diode forward voltage
IF=3.0A
CC Collector output capacitance
IE=0,f=1MHz;VCB=10V
MIN TYP. MAX UNIT
7.5 13.5
V
700 V
5.0 V
1.1 V
1.0
2.0
mA
90 180 mA
12
3.8 5.5 7.5
1.6 2.0
V
47 pF
2





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