POWER TRANSISTOR. BU1507AX Datasheet

BU1507AX TRANSISTOR. Datasheet pdf. Equivalent

Part BU1507AX
Description SILICON POWER TRANSISTOR
Feature SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BU1507AX www.datashee.
Manufacture SavantIC
Datasheet
Download BU1507AX Datasheet



BU1507AX
SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
BU1507AX
DESCRIPTION
www.dat·aWshiethet4TuO.co-2m20F package
·High voltage
·High speed switching
APPLICATIONS
·For use in horizontal deflection circuits of
colour TV receivers and computer monitors.
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector
Emitter
Fig.1 simplified outline (TO-220F) and symbol
Absolute maximum ratings (Ta=25 )
SYMBOL
PARAMETER
VCBO
VCEO
Collector-base voltage
Collector-emitter voltage
VEBO
IC
ICM
IB
IBM
Emitter-base voltage
Collector current
Collector current (peak)
Base current
Base current (peak)
PT Total power dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
VALUE
1500
700
7.5
8
15
4
6
45
150
-65~150
UNIT
V
V
V
A
A
A
A
W



BU1507AX
SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
BU1507AX
CHARACTERISTICS
www.datTasj=h2ee5t4u.ucnomless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)EBO Emitter-base breakdown voltage
IE=1mA ;IC=0
VCEO(SUS) Collector-emitter sustaining voltage IC=100mA ;IB=0;L=25mH
VCEsat Collector-emitter saturation voltage IC=4A; IB=0.8A
VBEsat
Base-emitter saturation voltage
ICES Collector cut-off current
IEBO Emitter cut-off current
IC=4A; IB=0.8A
VCE=rated;VBE=0
Tj=125
VEB=7.5V; IC=0
hFE-1
DC current gain
IC=0.1A ; VCE=5V
hFE-2
CC
DC current gain
Collector output capacitance
IC=4.0A ; VCE=5V
IE=0;f=1MHz;VCB=10V
MIN TYP. MAX UNIT
7.5 13.5
V
700 V
5.0 V
1.1 V
1.0
2.0
mA
1.0 mA
17
5.0 7.0 9.0
68 pF
2





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