POWER TRANSISTOR. BU1508DX Datasheet

BU1508DX TRANSISTOR. Datasheet pdf. Equivalent

Part BU1508DX
Description SILICON POWER TRANSISTOR
Feature SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BU1508DX www.datashee.
Manufacture SavantIC
Total Page 3 Pages
Datasheet
Download BU1508DX Datasheet



BU1508DX
SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
BU1508DX
DESCRIPTION
www.dat·aWshiethet4TuO.co-2m20F package
·High voltage
·High speed switching
·Built-in damper diode.
APPLICATIONS
·For use in horizontal deflection circuits of
colour TV receivers.
PINNING
PIN
DESCRIPTION
1 Base
2 Collector
3 Emitter
Fig.1 simplified outline (TO-220F) and symbol
Absolute maximum ratings (Ta=25 )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
IC Collector current
ICM Collector current (peak)
IB Base current
IBM Base current (peak)
PT Total power dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
VALUE
1500
700
7.5
8
15
4
6
35
150
-65~150
UNIT
V
V
V
A
A
A
A
W



BU1508DX
SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
BU1508DX
CHARACTERISTICS
www.datTasj=h2ee5t4u.ucnomless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)EBO Emitter-base breakdown voltage
IE=600mA ;IC=0
VCEO(SUS) Collector-emitter sustaining voltage IC=100mA ;IB=0;L=25mH
VCEsat Collector-emitter saturation voltage IC=4.5A; IB=1.1A
VBEsat
Base-emitter saturation voltage
ICES Collector cut-off current
IEBO Emitter cut-off current
IC=4.5A; IB=1.7A
VCE=rated;VBE=0
Tj=125
VEB=7.5V; IC=0
hFE-1
DC current gain
IC=1A ; VCE=5V
hFE-2
DC current gain
IC=4.5A ; VCE=1V
VF Diode forward voltage
IF=4.5A
CC Collector output capacitance
IE=0;f=1MHz;VCB=10V
MIN TYP. MAX UNIT
7.5 13.5
V
700 V
1.0 V
1.3 V
1.0
2.0
mA
140 390 mA
13
4 5.5 7.0
1.6 2.0
V
80 pF
2





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