POWER TRANSISTOR. BU1706AX Datasheet

BU1706AX TRANSISTOR. Datasheet pdf. Equivalent

Part BU1706AX
Description SILICON POWER TRANSISTOR
Feature SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BU1706AX www.datashee.
Manufacture SavantIC
Datasheet
Download BU1706AX Datasheet



BU1706AX
SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
BU1706AX
DESCRIPTION
www.dat·aWshiethet4TuO.co-2m20F package
·High voltage
·High speed switching
APPLICATIONS
·For use in high frequency electronic
lighting ballast applications.
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector
Emitter
Fig.1 simplified outline (TO-220F) and symbol
Absolute maximum ratings (Ta=25 )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
IC Collector current
ICM Collector current (peak)
IB Base current
IBM Base current (peak)
PT Total power dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
VALUE
1750
850
7.5
5
8
3
5
32
150
-40~150
UNIT
V
V
V
A
A
A
A
W



BU1706AX
SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
BU1706AX
CHARACTERISTICS
www.datTasj=h2ee5t4u.ucnomless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=100mA ;IB=0;L=25mH
VCEsat Collector-emitter saturation voltage IC=1.5A; IB=0.3A
VBEsat
Base-emitter saturation voltage
ICES Collector cut-off current
IEBO Emitter cut-off current
IC=1.5A; IB=0.3A
VCE=rated;VBE=0
Tj=125
VEB=12V; IC=0
hFE-1
DC current gain
IC=5mA ; VCE=10V
hFE-2
DC current gain
IC=0.4A ; VCE=3V
hFE-3
DC current gain
IC=1.5A ; VCE=1V
Switching times
ton Turn-on time
ts Storage time
tf Fall time
IC=1.5A ;IB1=-IB2=0.3A
MIN TYP. MAX UNIT
750 V
1.0 V
1.3 V
1.0
2.0
mA
1.0 mA
8
12 18 35
57
1.1 1.5 µs
5.0 6.5 µs
0.75 1.0
µs
2





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