POWER TRANSISTOR. BU2506AF Datasheet

BU2506AF TRANSISTOR. Datasheet pdf. Equivalent

Part BU2506AF
Description SILICON POWER TRANSISTOR
Feature SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BU2506AF www.datashee.
Manufacture SavantIC
Total Page 3 Pages
Datasheet
Download BU2506AF Datasheet



BU2506AF
SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
BU2506AF
DESCRIPTION
www.dat·aWshiethet4TuO.co-3mPFa package
·High voltage
·High speed switching
APPLICATIONS
·Intended for use in horizontal deflection
circuits of colour TV receivers
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector
Emitter
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VCBO
VCEO
IC
ICM
IB
IBM
Ptot
Tj
Tstg
Collector-base voltage
Open emitter
Collector-emitter voltage
Open base
Collector current (DC)
Collector current (Pulse)
Base Collector current (DC)
Base current (Pulse)
Total power dissipation
TC=25
Max.operating junction temperature
Storage temperature
VALUE
1500
700
5
8
3
5
45
150
-65~150
UNIT
V
V
A
A
A
A
W



BU2506AF
SavantIC Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
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SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=100mA ;IB=0,
V(BR)EBO Emitter-base breakdown voltage
IE=1mA ;IC=0
VCEsat Collector-emitter saturation voltage IC=3A ;IB=0.79A
VBEsat
Base-emitter saturation voltage
ICES Collector cut-off current
IEBO Emitter cut-off current
hFE-1
DC current gain
IC=3A ;IB=0.79A
VCE=RatedVCE ;VBE=0
Tj=125
VEB=7.5V; IC=0
IC=0.3A ; VCE=5V
hFE-2
DC current gain
IC=3A ; VCE=5V
Product Specification
BU2506AF
MIN TYP. MAX UNIT
700 V
7.5 V
5.0 V
1.1 V
1.0
2.0
mA
0.1 mA
12
3.8 5.5 7.5
2





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