POWER TRANSISTOR. BU2506DF Datasheet

BU2506DF TRANSISTOR. Datasheet pdf. Equivalent

Part BU2506DF
Description SILICON POWER TRANSISTOR
Feature SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BU2506DF www.datashee.
Manufacture SavantIC
Datasheet
Download BU2506DF Datasheet



BU2506DF
SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
BU2506DF
DESCRIPTION
www.dat·aWshiethet4TuO.co-3mPFa package
·High voltage
·High speed switching
·Built-in damper diode
APPLICATIONS
·Intended for use in horizontal deflection
circuits of colour TV receivers
PINNING
PIN
DESCRIPTION
1 Base
2 Collector
3 Emitter
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VCBO
Collector-base voltage
Open emitter
VCEO
Collector-emitter voltage
Open base
IC Collector current (DC)
ICM Collector current (Pulse)
IB Base Collector current (DC)
IBM Base current (Pulse)
Ptot Total power dissipation
TC=25
Tj Max.operating junction temperature
Tstg Storage temperature
VALUE
1500
700
5
8
3
5
45
150
-65~150
UNIT
V
V
A
A
A
A
W



BU2506DF
SavantIC Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
www.datasheet4u.com
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=100mA ;IB=0,
V(BR)EBO Emitter-base breakdown voltage
IE=600mA ;IC=0
VCEsat Collector-emitter saturation voltage IC=3A ;IB=0.79A
VBEsat
Base-emitter saturation voltage
ICES Collector cut-off current
IEBO Emitter cut-off current
hFE-1
DC current gain
IC=3A ;IB=0.79A
VCE=RatedVCE ;VBE=0
Tj=125
VEB=7.5V; IC=0
IC=0.3A ; VCE=5V
hFE-2
DC current gain
IC=3A ; VCE=5V
VF Diode forward voltage
CC Collector output capacitance
IF=3.0A
IE=0; f=1MHz;VCB=10V
Product Specification
BU2506DF
MIN TYP. MAX UNIT
700 V
7.5 13.5
V
5.0 V
1.1 V
1.0
2.0
mA
95 208 mA
12
3.8 5.5 7.5
1.6 2.0
V
47 pF
2





@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)