N-Channel MOSFET. AON4420L Datasheet

AON4420L MOSFET. Datasheet pdf. Equivalent

Part AON4420L
Description N-Channel MOSFET
Feature www.datasheet4u.com AON4420L N-Channel Enhancement Mode Field Effect Transistor General Description.
Manufacture Alpha & Omega Semiconductors
Datasheet
Download AON4420L Datasheet



AON4420L
AON4420L
www.datasheet4u.com
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AON4420L combines advanced trench MOSFET
technology with a small footprint package to provide low
RDS(ON) per unit area. This device is ideal for load switch
and high speed switching applications.
VDS (V) = 30V
ID = 10A
RDS(ON) < 19m
RDS(ON) < 25m
(VGS = 10V)
(VGS = 10V)
(VGS = 4.5V)
- RoHS Compliant
- Halogen Free
Top View
DFN 3x2
Bottom View
Pin 1
D
D
D
G
D
D
D
S
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Pulsed Drain Current C
VGS
IDM
Continuous Drain
Current A
TA=25°C
TA=70°C
ID
TA=25°C
Power Dissipation A TA=70°C
PD
Junction and Storage Temperature Range
TJ, TSTG
Maximum
30
±20
50
10
8
1.6
1
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead B
t 10s
Steady-State
Steady-State
Symbol
RθJA
RθJL
Typ
34
66
20
Max
40
80
25
D
S
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com



AON4420L
AON4420L
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
www.daBtaVshDeSeSt4u.coDmrain-Source Breakdown Voltage
ID = 250µA, VGS = 0V
IDSS Zero Gate Voltage Drain Current
VDS = 30V, VGS = 0V
TJ = 55°C
IGSS Gate-Body leakage current
VDS = 0V, VGS = ±20V
VGS(th)
Gate Threshold Voltage
VDS = VGS ID = 250µA
ID(ON)
On state drain current
VGS = 10V, VDS = 5V
VGS = 10V, ID = 10A
RDS(ON) Static Drain-Source On-Resistance
TJ=125°C
VGS = 4.5V, ID = 8A
gFS Forward Transconductance
VDS = 5V, ID = 10A
VSD Diode Forward Voltage
IS = 1A,VGS = 0V
IS Maximum Body-Diode Continuous Current
30
1.4
50
V
1
5
µA
±100 nA
1.9 2.5
V
A
16 20
27 m
21 26
30 S
0.75 1
V
3A
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
440 550 660
80 110 140
35 55 80
246
pF
pF
pF
SWITCHING PARAMETERS
Qg (10V) Total Gate Charge (10V)
Qg (4.5V) Total Gate Charge (4.5V)
Qgs Gate Source Charge
VGS=10V, VDS=15V, ID=10A
Qgd Gate Drain Charge
tD(on)
Turn-On DelayTime
tr Turn-On Rise Time
VGS=10V, VDS=15V, RL=1.5,
tD(off)
Turn-Off DelayTime
RGEN=3
tf Turn-Off Fall Time
trr Body Diode Reverse Recovery Time IF=10A, dI/dt=300A/µs
Qrr Body Diode Reverse Recovery Charge IF=10A, dI/dt=300A/µs
8 9.8 12 nC
4 4.6 5.5 nC
1.5 1.8 2.2 nC
1.3 2.2 3 nC
5 ns
3.2 ns
24 ns
6 ns
8 11 14 ns
11 13 16 nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA = 25°C. The
value in any given application depends on the user's specific board design.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using t 300µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA
curve provides a single pulse rating.
F. The current rating is based on the t 10s thermal resistance rating.
Rev0: July 2008
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com





@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)