N-Channel MOSFET. AOT1N60 Datasheet

AOT1N60 MOSFET. Datasheet pdf. Equivalent

Part AOT1N60
Description 600V N-Channel MOSFET
Feature AOT1N60 600V,1.3A N-Channel MOSFET General Description Product Summary The AOT1N60 have been fabr.
Manufacture Alpha & Omega Semiconductors
Datasheet
Download AOT1N60 Datasheet



AOT1N60
AOT1N60
600V,1.3A N-Channel MOSFET
General Description
Product Summary
The AOT1N60 have been fabricated using an advanced
high voltage MOSFET process that is designed to deliver
high levels of performance and robustness in popular AC-
DC applications.By providing low RDS(on), Ciss and Crss
along with guaranteed avalanche capability these parts
can be adopted quickly into new and existing offline power
supply designs.
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
For Halogen Free add "L" suffix to part number:
AOT1N60L
100% UIS Tested
100% Rg Tested
Top View
TO-220
D
700V@150
1.3A
< 9
G
D
S
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Maximum
Drain-Source Voltage
VDS 600
Gate-Source Voltage
VGS ±30
Continuous Drain TC=25°C
Current
TC=100°C
Pulsed Drain Current C
Avalanche Current C
Repetitive avalanche energy C
Single plused avalanche energy G
Peak diode recovery dv/dt
ID
IDM
IAR
EAR
EAS
dv/dt
1.3
0.9
4
1
15
30
5
TC=25°C
Power Dissipation B Derate above 25oC
PD
41.7
0.3
Junction and Storage Temperature Range
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
Thermal Characteristics
TJ, TSTG
TL
-55 to 150
300
Parameter
Maximum Junction-to-Ambient A,D
Maximum Case-to-sink A
Symbol
RθJA
RθCS
Typical
55
-
Maximum
65
0.5
Maximum Junction-to-Case
RθJC
2
3
Units
V
V
A
A
mJ
mJ
V/ns
W
W/ oC
°C
°C
Units
°C/W
°C/W
°C/W
Rev4: July 2010
www.aosmd.com
Page 1 of 5



AOT1N60
AOT1N60
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
ID=250µA, VGS=0V, TJ=25°C
ID=250µA, VGS=0V, TJ=150°C
BVDSS
/∆TJ
Breakdown Voltage Temperature
Coefficient
ID=250µA, VGS=0V
IDSS Zero Gate Voltage Drain Current
VDS=600V, VGS=0V
VDS=480V, TJ=125°C
IGSS Gate-Body leakage current
VDS=0V, VGS=±30V
VGS(th) Gate Threshold Voltage
VDS=5V ID=250µA
RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=0.65A
gFS Forward Transconductance
VDS=40V, ID=0.65A
VSD Diode Forward Voltage
IS=1A,VGS=0V
IS Maximum Body-Diode Continuous Current
ISM Maximum Body-Diode Pulsed Current
600
700
V
0.6 V/ oC
1
µA
10
100 nΑ
3 4.1 4.5 V
7.5 9
0.9 S
0.65 1
V
1A
4A
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=25V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
100 130 160
11 14.5 17.5
1.4 1.8 2.2
2.8 3.5 5.3
pF
pF
pF
SWITCHING PARAMETERS
Qg Total Gate Charge
Qgs Gate Source Charge
VGS=10V, VDS=480V, ID=1A
Qgd Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
tD(off)
Turn-On Rise Time
Turn-Off DelayTime
VGS=10V, VDS=300V, ID=1A,
RG=25
tf Turn-Off Fall Time
trr Body Diode Reverse Recovery Time IF=1A,dI/dt=100A/µs,VDS=100V
Qrr Body Diode Reverse Recovery Charge IF=1A,dI/dt=100A/µs,VDS=100V
6.1
1.3
3.1
10
6.7
20
11.5
114
0.63
8
2
4
12
8
25
15
137
0.76
nC
nC
nC
ns
ns
ns
ns
ns
µC
A. The value of R θJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial TJ
=25°C.
D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. L=60mH, IAS=1A, VDD=150V, RG=25, Starting TJ=25°C
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev4: July 2010
www.aosmd.com
Page 2 of 5





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