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AOT2N60 Dataheets PDF



Part Number AOT2N60
Manufacturers Alpha & Omega Semiconductors
Logo Alpha & Omega Semiconductors
Description 2A N-Channel MOSFET
Datasheet AOT2N60 DatasheetAOT2N60 Datasheet (PDF)

www.datasheet4u.com AOT2N60/AOTF2N60 600V, 2A N-Channel MOSFET General Description The AOT2N60 & AOTF2N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. Features VDS (V) = 700V @ 150°C ID = 2A RDS(ON) < 4.4Ω.

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www.datasheet4u.com AOT2N60/AOTF2N60 600V, 2A N-Channel MOSFET General Description The AOT2N60 & AOTF2N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. Features VDS (V) = 700V @ 150°C ID = 2A RDS(ON) < 4.4Ω (VGS = 10V) 100% UIS Tested! 100% R g Tested! C iss , C oss , C rss Tested! TO-220 Top View TO-220F D G D G S D G S S Absolute Maximum Ratings TA=25°C unless otherwise noted AOT2N60 Parameter AOTF2N60 Symbol VDS Drain-Source Voltage 600 VGS ±30 Gate-Source Voltage Continuous Drain Current Pulsed Drain Current C Units V V A A mJ mJ V/ns W W/ oC °C °C TC=25°C TC=100°C ID IDM IAR EAR EAS dv/dt PD TJ, TSTG TL 2 1.6 8 2 60 120 5 74 0.6 -50 to 150 300 AOT2N60 65 0.5 1.7 2* 1.6* Avalanche Current C, G Repetitive avalanche energy C, G Single pulsed avalanche energy G Peak diode recovery dv/dt TC=25°C B Power Dissipation Derate above 25oC Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics Parameter Maximum Junction-to-Ambient A,D 31 0.25 Symbol RθJA A R θCS Maximum Case-to-Sink RθJC Maximum Junction-to-Case * Drain current limited by maximum junction temperature. AOTF2N60 65 -4.0 Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOT2N60 / AOTF2N60 Electrical Characteristics (T J=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS www.datasheet4u.com Conditions ID=250µA, VGS=0V, TJ=25°C ID=250µA, VGS=0V, TJ=150°C ID=250µA, VGS=0V VDS=600V, VGS=0V VDS=480V, TJ=125°C VDS=0V, VGS=±30V VDS=VGS, ID=250µA VGS=10V, ID=1A VDS=40V, ID=1A Min 600 Typ Max Units V BVDSS Drain-Source Breakdown Voltage 700 0.56 1 10 ±100 3 4 3.6 3.5 0.79 1 2 8 215 270 29 2.8 4.4 9.5 1.9 4.7 17.2 14.3 27 17 128 0.6 154 0.8 185 1.0 325 35 3.4 6.6 11.4 2.3 5.6 5 4.4 V o V/ C BVDSS /∆TJ IDSS IGSS VGS(th) RDS(ON) gFS VSD IS ISM Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance µA nA V Ω S V A A pF pF pF Ω nC nC nC ns ns ns ns ns µC Diode Forward Voltage IS=1A, VGS=0V Maximum Body-Diode Continuous Current Maximum Body-Diode Pulsed Current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance VGS=0V, VDS=0V, f=1MHz VGS=0V, VDS=25V, f=1MHz 23 2.2 3.5 7.8 SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd tD(on) tr tD(off) tf trr Qrr Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time VGS=10V, VDS=480V, ID=2A 1.5 3.9 VGS=10V, VDS=300V, ID=2A, RG=25Ω IF=2A,dI/dt=100A/µs,VDS=100V Body Diode Re.


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