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AOT2N60/AOTF2N60 600V, 2A N-Channel MOSFET
General Description
The AOT2N60 & AOTF2N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs.
Features
VDS (V) = 700V @ 150°C ID = 2A RDS(ON) < 4.4Ω
(VGS = 10V)
100% UIS Tested! 100% R g Tested! C iss , C oss , C rss Tested!
TO-220
Top View
TO-220F
D
G
D
G S
D
G S S
Absolute Maximum Ratings TA=25°C unless otherwise noted AOT2N60 Parameter AOTF2N60 Symbol VDS Drain-Source Voltage 600 VGS ±30 Gate-Source Voltage Continuous Drain Current Pulsed Drain Current
C
Units V V A A mJ mJ V/ns W W/ oC °C °C
TC=25°C TC=100°C
ID IDM IAR EAR EAS dv/dt PD TJ, TSTG TL
2 1.6 8 2 60 120 5 74 0.6 -50 to 150 300 AOT2N60 65 0.5 1.7
2* 1.6*
Avalanche Current C, G Repetitive avalanche energy C, G Single pulsed avalanche energy G Peak diode recovery dv/dt TC=25°C B Power Dissipation Derate above 25oC Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics Parameter Maximum Junction-to-Ambient
A,D
31 0.25
Symbol RθJA A R θCS Maximum Case-to-Sink RθJC Maximum Junction-to-Case * Drain current limited by maximum junction temperature.
AOTF2N60 65 -4.0
Units °C/W °C/W °C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOT2N60 / AOTF2N60
Electrical Characteristics (T J=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS
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Conditions ID=250µA, VGS=0V, TJ=25°C ID=250µA, VGS=0V, TJ=150°C ID=250µA, VGS=0V VDS=600V, VGS=0V VDS=480V, TJ=125°C VDS=0V, VGS=±30V VDS=VGS, ID=250µA VGS=10V, ID=1A VDS=40V, ID=1A
Min 600
Typ
Max
Units V
BVDSS
Drain-Source Breakdown Voltage
700 0.56 1 10 ±100 3 4 3.6 3.5 0.79 1 2 8 215 270 29 2.8 4.4 9.5 1.9 4.7 17.2 14.3 27 17 128 0.6 154 0.8 185 1.0 325 35 3.4 6.6 11.4 2.3 5.6 5 4.4
V
o V/ C
BVDSS /∆TJ IDSS IGSS VGS(th) RDS(ON) gFS VSD IS ISM
Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance
µA nA V Ω S V A A pF pF pF Ω nC nC nC ns ns ns ns ns µC
Diode Forward Voltage IS=1A, VGS=0V Maximum Body-Diode Continuous Current Maximum Body-Diode Pulsed Current
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance VGS=0V, VDS=0V, f=1MHz VGS=0V, VDS=25V, f=1MHz
23 2.2 3.5 7.8
SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd tD(on) tr tD(off) tf trr Qrr Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time
VGS=10V, VDS=480V, ID=2A
1.5 3.9
VGS=10V, VDS=300V, ID=2A, RG=25Ω IF=2A,dI/dt=100A/µs,VDS=100V
Body Diode Re.