N-Channel MOSFET. AOT2N60 Datasheet

AOT2N60 MOSFET. Datasheet pdf. Equivalent

Part AOT2N60
Description 2A N-Channel MOSFET
Feature www.datasheet4u.com AOT2N60/AOTF2N60 600V, 2A N-Channel MOSFET General Description The AOT2N60 & AO.
Manufacture Alpha & Omega Semiconductors
Datasheet
Download AOT2N60 Datasheet



AOT2N60
AOT2N60/AOTF2N60
www.datasheet4u.com
600V, 2A N-Channel MOSFET
General Description
The AOT2N60 & AOTF2N60 have been fabricated
using an advanced high voltage MOSFET process
that is designed to deliver high levels of performance
and robustness in popular AC-DC applications.
By providing low RDS(on), Ciss and Crss along with
guaranteed avalanche capability these parts can be
adopted quickly into new and existing offline power
supply designs.
Features
VDS (V) = 700V @ 150°C
ID = 2A
RDS(ON) < 4.4
(VGS = 10V)
100% UIS Tested!
100% R g Tested!
C iss , C oss , C rss Tested!
TO-220
Top View
TO-220F
D
G
D
S
G
D
S
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
AOT2N60 AOTF2N60
Drain-Source Voltage
VDS 600
Gate-Source Voltage
VGS ±30
Continuous Drain
TC=25°C
Current
TC=100°C
Pulsed Drain Current C
Avalanche Current C, G
Repetitive avalanche energy C, G
Single pulsed avalanche energy G
Peak diode recovery dv/dt
ID
IDM
IAR
EAR
EAS
dv/dt
2
1.6
8
2
60
120
5
2*
1.6*
TC=25°C
Power Dissipation B Derate above 25oC
PD
74 31
0.6 0.25
Junction and Storage Temperature Range
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
TJ, TSTG
TL
-50 to 150
300
Thermal Characteristics
Parameter
Symbol
AOT2N60 AOTF2N60
Maximum Junction-to-Ambient A,D
Maximum Case-to-Sink A
RθJA
RθCS
65
0.5
65
--
Maximum Junction-to-Case
RθJC
* Drain current limited by maximum junction temperature.
1.7
4.0
Units
V
V
A
A
mJ
mJ
V/ns
W
W/ oC
°C
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com



AOT2N60
AOT2N60 / AOTF2N60
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
www.daBtaVsDhSeSet4u.cDomrain-Source Breakdown Voltage
ID=250µA, VGS=0V, TJ=25°C
ID=250µA, VGS=0V, TJ=150°C
BVDSS
/TJ
Breakdown Voltage Temperature
Coefficient
ID=250µA, VGS=0V
IDSS Zero Gate Voltage Drain Current
VDS=600V, VGS=0V
VDS=480V, TJ=125°C
IGSS Gate-Body leakage current
VDS=0V, VGS=±30V
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250µA
RDS(ON) Static Drain-Source On-Resistance
VGS=10V, ID=1A
gFS Forward Transconductance
VDS=40V, ID=1A
VSD Diode Forward Voltage
IS=1A, VGS=0V
IS Maximum Body-Diode Continuous Current
ISM Maximum Body-Diode Pulsed Current
600
700
V
V
0.56
V/ oC
1
10
µA
±100 nA
345V
3.6 4.4
3.5 S
0.79 1
V
2A
8A
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=25V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
215 270 325
23 29 35
2.2 2.8 3.4
3.5 4.4 6.6
pF
pF
pF
SWITCHING PARAMETERS
Qg Total Gate Charge
7.8 9.5 11.4 nC
Qgs Gate Source Charge
VGS=10V, VDS=480V, ID=2A
1.5 1.9 2.3 nC
Qgd Gate Drain Charge
3.9 4.7 5.6 nC
tD(on)
Turn-On DelayTime
17.2 ns
tr Turn-On Rise Time
VGS=10V, VDS=300V, ID=2A,
14.3 ns
tD(off)
Turn-Off DelayTime
RG=25
27 ns
tf Turn-Off Fall Time
17 ns
trr Body Diode Reverse Recovery Time IF=2A,dI/dt=100A/µs,VDS=100V 128 154 185 ns
Qrr
Body Diode Reverse Recovery Charge IF=2A,dI/dt=100A/µs,VDS=100V 0.6 0.8 1.0
µC
A. The value of R θJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial
TJ =25°C.
D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. L=60mH, IAS=2A, VDD=50V, RG=25, Starting TJ=25°C
Rev 0. Sep. 2008
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com





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