AOT460

AOT460 N-Channel Enhancement Mode Field Effect Transistor General Description The AOT460/L uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in UPS, high current switching applications. AOT460and AOT460L are electrically identical. -RoHS Compliant -Halogen Free Features VDS (V) = 60V ID = 85 A (VGS = 10V) RDS(ON) < 7.5mΩ (VGS = 10V) 100% UIS Tested! TO220 Top View Bottom View D D S GD G SD G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TC=25°C CurrentG TC=100°C Pulsed Drain Current C Avalanche Current C Repetitive avalanche energy L=0.1mH C ID IDM IAR EAR TC=25°C Power Dissipation B TC=100°C PD Junction and Storage Temperature Range TJ, TSTG Maximum 60 ±20 85 66 340 80 320 268 134 -55 to 175 Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Case B Steady-State Steady-State Symbol RθJA RθJC Typ 45 0.45 Max 60 0.56 Units V V A A mJ W °C Units °C/W °C/W Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOT460 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250uA, VGS=0V 60 V IDSS Zero Gate Voltage Drain Current VDS=60V, VGS=0V TJ=55°C 10 µA 50 IGSS Gate-Body leakage current VDS=0V, VGS=±20V 100 nA VGS(th) ...