5A N-Channel MOSFET
AOT5N50/AOTF5N50
500V, 5A N-Channel MOSFET
General Description
Product Summary
The AOT5N50 & AOTF5N50 have been fabri...
Description
AOT5N50/AOTF5N50
500V, 5A N-Channel MOSFET
General Description
Product Summary
The AOT5N50 & AOTF5N50 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs.
For Halogen Free add "L" suffix to part number: AOT5N50L & AOTF5N50L
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V)
100% UIS Tested 100% Rg Tested
TO-220
Top View
TO-220F
600V@150℃ 5A < 1.5Ω
D
G D S
G D S
G S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
AOT5N50
AOTF5N50
Drain-Source Voltage
VDS 500
Gate-Source Voltage
VGS ±30
Continuous Drain TC=25°C
Current
TC=100°C
Pulsed Drain Current C
Avalanche Current C
Repetitive avalanche energy C
Single plused avalanche energy G
Peak diode recovery dv/dt
ID
IDM IAR EAR EAS dv/dt
5 5* 3.3 3.3*
18 2.6 101 203
5
TC=25°C Power Dissipation B Derate above 25oC
PD
104 35.0 0.8 0.3
Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics
TJ, TSTG TL
-55 to 150 300
Parameter Maximum Junction-to-Ambient A,D
Maximum Case-to-sink A
Symbol RθJA RθCS
AOT5N50 65 0.5
AOTF5N50 65 --
Maximum Junction-to-Case
RθJC
* Drain current limited by maximum junction temperature.
1.2
...
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