AOT9608

www.datasheet4u.com AOT10N60 / AOTF10N60 600V, 10A N-Channel MOSFET formerly engineering part number AOT9608/AOTF9608 General Description The AOT10N60 & AOTF10N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. Features VDS (V) = 700V @ 150°C ID = 10A RDS(ON) < 0.75 Ω (VGS = 10V) 100% UIS Tested! 100% R g Tested! C iss , C oss , C rss Tested! TO-220 Top View TO-220F D G G D G S D S S Absolute Maximum Ratings TA=25°C unless otherwise noted AOT10N60 Parameter Symbol AOTF10N60 VDS Drain-Source Voltage 600 VGS ±30 Gate-Source Voltage Continuous Drain Current B Pulsed Drain Current Avalanche Current C Repetitive avalanche energy C Single pulsed avalanche energy G Peak diode recovery dv/dt TC=25°C B Power Dissipation Derate above 25oC Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics Parameter Maximum Junction-to-Ambient A C Units V V A A mJ mJ V/ns W W/ oC °C °C TC=25°C TC=100°C ID IDM IAR EAR EAS dv/dt PD TJ, TSTG TL 10 6.4 36 4.4 290 580 5 208 1.7 -50 to 150 300 AOT10N60 65 0.5 0.6 10* 6.4* 50 0.4 Symbol RθJA A R θCS Maximum Case-to-Sink RθJC Maximum Junction-to-Case D,F * Drain current limi...