Silicon Transistor. 2SD1886C Datasheet

2SD1886C Transistor. Datasheet pdf. Equivalent

Part 2SD1886C
Description NPN Triple Diffused Planar Silicon Transistor
Feature Ordering number : EN7201 2SD1886C SANYO Semiconductors DATA SHEET www.datasheet4u.com 2SD1886C F.
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2SD1886C
Ordering number : EN7201
2SD1886C
SANYO Semiconductors
DATA SHEET
www.datasheet4u.com
2SD1886C NPN Triple Diffused Planar Silicon Transistor
Color TV Horizontal Deflection
Features
Output Applications
High speed.
High breakdown voltage (VCBO=1500V).
High reliability (Adoption of HVP process).
Adoption of MBIT process.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Tc=25°C
Electrical Characteristics at Ta=25°C
Conditions
Parameter
Collector Cutoff Current
Collector Cutoff Current
Collector Sustain Voltage
Emitter Cutoff Current
Symbol
Conditions
ICBO
ICES
VCEO(sus)
IEBO
VCB=800V, IE=0A
VCE=1500V, RBE=0A
IC=100mA, IB=0A
VBE=4V, IC=0A
Ratings
1500
700
5
8
25
3.0
80
150
--55 to +150
Unit
V
V
V
A
A
W
W
°C
°C
min
700
Ratings
typ
max
Unit
10 μA
1.0 mA
V
1.0 mA
Continued on next page.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer's products or
equipment.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
20608KC TI IM TA-3443 No. 7201-1/4



2SD1886C
2SD1886C
Continued from preceding page.
Parameter
DC Current Gain
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
www.dataFsahlleTeimt4eu.com
Package Dimensions
unit : mm (typ)
7504-001
Symbol
hFE1
hFE2
VCE(sat)
VBE(sat)
tf
16.0 3.4 5.6
3.1
Conditions
VCE=5V, IC=1A
VCE=5V, IC=8A
IC=7.2A, IB=1.44A
IC=7.2A, IB=1.44A
IC=5A, IB1=1A, IB2=--2A
min
15
5
Ratings
typ
Switching Time Test Circuit
PW=20μs
D.C.1%
INPUT
VR
IB1
IB2
RB
Unit
max
8
3V
1.5 V
0.3 μs
OUTPUT
RL=40.0Ω
2.8
2.0 2.1
50Ω
+
100μF
VBE= --2V
+
470μF
VCC=200V
0.7
123
5.45
5.45
0.9
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-3PMLH
12 IC -- VCE
1.8A 1.6A 1.4A 1.2A 2.0A
10
8 1.0A
0.8A
0.6A
6
0.4A
4 0.2A
2
IB=0A
0
0 1 2 3 4 5 6 7 8 9 10
Collector-to-Emitter Voltage, VCE -- V IT03004
hFE -- IC
100
7 Ta=120°C
VCE=5V
5 25°C
3 --40°C
2
10
7
5
3
2
1.0
0.1
23
5 7 1.0
23
Collector Current, IC -- A
5 7 10
IT03006
12 IC -- VBE
VCE=5V
10
8
6
4
2
0
0
10
7
5
3
2
1.0
7
5
3
2
0.1
7
5
3
2
0.01
0.1
0.2 0.4 0.6 0.8 1.0 1.2
Base-to-Emitter Voltage, VBE -- V IT03005
VCE(sat) -- IC
IC / IB=5
25°C
Ta=120°C--40°C
23
5 7 1.0
23
Collector Current, IC -- A
5 7 10
IT03007
No. 7201-2/4





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