POWER TRANSISTOR. BU2508D Datasheet

BU2508D TRANSISTOR. Datasheet pdf. Equivalent

Part BU2508D
Description SILICON POWER TRANSISTOR
Feature SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BU2508D www.datasheet.
Manufacture SavantIC
Datasheet
Download BU2508D Datasheet



BU2508D
SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
BU2508D
DESCRIPTION
www.dat·aWshiethet4TuO.co-3mPN package
·High voltage;high speed
·Built-in damper diode
APPLICATIONS
·For use in horizontal deflection circuits
of colour TV receivers.
PINNING
PIN
DESCRIPTION
1 Base
2
Collector;connected to
mounting base
3 Emitter
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings (Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VCBO
VCEO
VEBO
IC
ICM
IB
IBM
PC
Tj
Tstg
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
Base current
Base current-peak
Collector power dissipation
Junction temperature
Storage temperature
Open emitter
Open base
Open collector
TC=25
VALUE
1500
700
7.5
8
15
4
6
125
150
-65~150
UNIT
V
V
V
A
A
A
A
W



BU2508D
SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
BU2508D
CHARACTERISTICS
www.datTasj=h2ee5t4u.ucnomless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A; IB=0,L=25mH
V(BR)EBO Emitter-base breakdown voltage
IE=600mA; IC=0
VCE(sat-1) Collector-emitter saturation voltage IC=4.5A; IB=1.1A
VCE(sat-2) Collector-emitter saturation voltage IC=4.5A; IB=1.29A
VBE(sat) Base-emitter saturation voltage
ICES Collector cut-off current
IEBO Emitter cut-off current
IC=4.5A; IB=1.7A
VCE=rated; VBE=0
T=125°C
VEB=7.5V; IC=0
hFE-1
DC current gain
IC=1A ; VCE=5V
hFE-2
DC current gain
VF Diode forward voltage
CC Collector capacitance
IC=4.5A ; VCE=1V
IF=4.5A
VCB=10V;f=1MHz
MIN TYP. MAX UNIT
700 V
7.5 13.5
V
5.0 V
1.0 V
1.3 V
1.0
2.0
mA
140 390 mA
7 13 23
4 5.5 7.5
1.6 2.0
V
80 pF
2





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