POWER TRANSISTOR. BU2508DF Datasheet

BU2508DF TRANSISTOR. Datasheet pdf. Equivalent

Part BU2508DF
Description SILICON POWER TRANSISTOR
Feature SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BU2508DF www.datashee.
Manufacture SavantIC
Datasheet
Download BU2508DF Datasheet



BU2508DF
SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
BU2508DF
DESCRIPTION
www.dat·aWshiethet4TuO.co-3mPFa package
·High voltage,high speed
·Built-in damper diode
APPLICATIONS
·For use in horizontal deflection circuits
of colour TV
PINNING
PIN
DESCRIPTION
1 Base
2 Collector
3 Emitter
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VCBO
VCEO
Collector-base voltage
Collector-emitter voltage
Open emitter
Open base
IC Collector current (DC)
ICM Collector current (Pulse)
IB Base Collector current (DC)
IBM Base current (Pulse)
Ptot Total power dissipation
TC=25
Tj Junction temperature
Tstg Storage temperature
VALUE
1500
700
8
15
4
6
45
150
-65~150
UNIT
V
V
A
A
A
A
W



BU2508DF
SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
BU2508DF
CHARACTERISTICS
Tj=25 unless otherwise specified
www.datasheet4u.com
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=100mA ;IB=0,L=25mH
VEBO
Emitter-base breakdown voltage
IE=600mA ;IC=0
VCEsat Collector-emitter saturation voltage IC=4.5A ;IB=1.12A
VBEsat
Base-emitter saturation voltage
ICES Collector cut-off current
IEBO Emitter cut-off current
IC=4.5A ;IB=1.7A
VCE=BVCES; VBE=0
Tj=125
VEB=7.5V; IC=0
hFE-1
DC current gain
IC=1A ; VCE=5V
hFE-2
DC current gain
IC=4.5A ; VCE=1V
VF Diode forward voltage
IF=4.5A
CC Collector capacitance
IE=0; f=1MHz;VCB=10V
MIN TYP. MAX UNIT
700 V
7.5 13.5
V
1.0 V
1.1 V
1.0
2.0
mA
227 mA
13
4 5.5 7.0
1.6 2.0
V
80 pF
2





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