POWER TRANSISTOR. BU2508DX Datasheet

BU2508DX TRANSISTOR. Datasheet pdf. Equivalent

Part BU2508DX
Description SILICON POWER TRANSISTOR
Feature SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BU2508DX www.datashee.
Manufacture SavantIC
Datasheet
Download BU2508DX Datasheet



BU2508DX
SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
BU2508DX
DESCRIPTION
www.dat·aWshiethet4TuO.co-3mPML package
·High voltage;high speed
·Built-in damper diode
APPLICATIONS
·For use in horizontal deflection
circuits of color TV receivers
PINNING
PIN
DESCRIPTION
1 Base
2 Collector
3 Emitter
Fig.1 simplified outline (TO-3PML) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VCBO
VCEO
VEBO
IC
ICM
IB
IBM
Ptot
Tj
Tstg
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current (DC)
Collector current (Pulse)
Base current (DC)
Base current (Pulse)
Total power dissipation
Junction temperature
Storage temperature
Open emitter
Open base
Open collector
TC=25
VALUE
1500
700
7.5
8
15
4
6
45
150
-55~150
UNIT
V
V
V
A
A
A
A
W



BU2508DX
SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
BU2508DX
CHARACTERISTICS
Tj=25 unless otherwise specified
www.datasheet4u.com
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=100mA ;IB=0,L=25mH
V(BR)EBO Emitter-base breakdown voltage
IE=600mA ;IC=0
VCEsat Collector-emitter saturation voltage IC=4.5A ;IB=1.12A
VBEsat
Base-emitter saturation voltage
ICES Collector cut-off current
IEBO Emitter cut-off current
IC=4.5A ;IB=1.7A
VCE=BVCES; VBE=0
Tj=125
VEB=7.5V; IC=0
hFE-1
DC current gain
IC=1A ; VCE=5V
hFE-2
DC current gain
IC=4.5A ; VCE=1V
VF Diode forward voltage
IF=4.5A
CC Collector capacitance
IE=0 ; VCB=10V;f=1MHz
MIN TYP. MAX UNIT
700 V
7.5 13.5
V
1.0 V
1.1 V
1.0
2.0
mA
227 mA
13
47
2.0 V
80 pF
2





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