POWER TRANSISTOR. BU2515AF Datasheet

BU2515AF TRANSISTOR. Datasheet pdf. Equivalent

Part BU2515AF
Description SILICON POWER TRANSISTOR
Feature SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BU2515AF www.datashee.
Manufacture SavantIC
Total Page 3 Pages
Datasheet
Download BU2515AF Datasheet



BU2515AF
SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
BU2515AF
DESCRIPTION
www.dat·aWshiethet4TuO.co-3mPFa package
·High voltage
·High speed switching
APPLICATIONS
·For use in horizontal deflection
circuits of PC monitors
PINNING
PIN
DESCRIPTION
1 Base
2 Collector
3 Emitter
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
IC Collector current (DC)
ICM Collector current (Pulse)
IB Base Collector current (DC)
IBM Base current (Pulse)
Ptot Total power dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
VALUE
1500
800
7.5
9
20
5
7.5
45
150
-55~150
UNIT
V
V
V
A
A
A
A
W



BU2515AF
SavantIC Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
www.datasheet4u.com
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=100mA ;IB=0
VEBO
Emitter-base breakdown voltage
IE=1mA ;IC=0
VCEsat Collector-emitter saturation voltage IC=4.5A ;IB=0.9A
VBEsat
Emitter-base saturation voltage
ICES Collector cut-off current
IEBO Emitter cut-off current
IC=4.5A ;IB=0.9A
VCE=BVCES; VBE=0
Tj=125
VEB=7.5V; IC=0
hFE-1
DC current gain
IC=0.5A ; VCE=5V
hFE-2
DC current gain
IC=4.5A ; VCE=5V
Product Specification
BU2515AF
MIN TYP. MAX UNIT
700 V
7.5 13.5
V
5.0 V
1.0 V
1.0
2.0
mA
1.0 mA
17.2
5 10.8
2





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