POWER TRANSISTOR. BU2520A Datasheet

BU2520A TRANSISTOR. Datasheet pdf. Equivalent

Part BU2520A
Description SILICON POWER TRANSISTOR
Feature SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BU2520A www.datasheet.
Manufacture SavantIC
Datasheet
Download BU2520A Datasheet



BU2520A
SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
BU2520A
DESCRIPTION
www.dat·aWshiethet4TuO.co-3mPN package
·High voltage
·High speed switching
APPLICATIONS
·For use in horizontal deflection circuits of
large screen colour TV receivers.
PINNING
PIN
DESCRIPTION
1 Base
2
Collector;connected to
mounting base
3 Emitter
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings (Ta=25 )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
IC Collector current (DC)
ICM Collector current (Pulse)
IB Base current
IBM Base current(peak)
PC Collector power dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
VALUE
1500
800
7.5
10
25
6
9
125
150
-65~150
UNIT
V
V
V
A
A
A
A
W



BU2520A
SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
BU2520A
CHARACTERISTICS
www.datTasj=h2ee5t4u.ucnomless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter breakdown voltage IC=100mA; IB=0;L=25mH
V(BR)EBO Emitter-base breakdown voltage
IE=1mA; IC=0
VCEsat Collector-emitter saturation voltage IC=6A; IB=1.2A
VBEsat
Base-emitter saturation voltage
ICES Collector cut-off current
IEBO Emitter cut-off current
IC=6A; IB=1.2A
VCE=rated; VBE=0
T=125°C
VEB=7.5V; IC=0
hFE-1
DC current gain
IC=0.1A ; VCE=5V
hFE-2
DC current gain
IC=6A ; VCE=5V
CC Collector capacitance
IE=0 VCB=10V;f=1MHz
MIN TYP. MAX UNIT
700 V
7.5 13.5
V
5.0 V
1.3 V
1.0
2.0
mA
1.0 mA
6 13 26
5 7 10
115 pF
2





@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)