SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
BU2527DF
www.datasheet4u.com
DESCRIPTION...
SavantIC Semiconductor
Product Specification
Silicon
NPN Power
Transistors
BU2527DF
www.datasheet4u.com
DESCRIPTION ·With TO-3PFa package ·High voltage ·High speed switching ·Built-in damper diode APPLICATIONS ·For use in horizontal deflection circuits of high resolution monitors
PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION
Absolute maximum ratings(Ta=25 )
SYMBOL VCBO VCEO VEBO IC ICM IB IBM Ptot Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current -peak Base current (DC) Base current -peak Total power dissipation Max.operating junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 1500 800 7.5 12 30 8 12 45 150 -65~150 UNIT V V V A A A A W
SavantIC Semiconductor
Product Specification
Silicon
NPN Power
Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER CONDITIONS MIN
www.datasheet4u.com
BU2527DF
SYMBOL
TYP.
MAX
UNIT
VCEO(SUS)
Collector-emitter sustaining voltage
IC=100mA ;IB=0,L=25mH
800
V
V(BR)EBO
Emitter-base breakdown voltage
IE=600mA ;IC=0
7.5
13.5
V
VCEsat
Collector-emitter saturation voltage
IC=8A ;IB=1.6A
5.0
V
VBEsat
Base-emitter saturation voltage
IC=8A ;IB=1.6A VCE=BVCES; VBE=0 Tj=125 VEB=6V; IC=0 110
1.1 1.0 2.0
V
ICES
Collector cut-off current
mA
IEBO
Emitter cut-off current
mA
hFE-1
DC current gain
IC=1A ; VCE=5V
11
hFE-2
DC current gain
IC=8A ; VCE=5V
5
10
CC
Col...