SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
BU2720DF
www.datasheet4u.com
DESCRIPTION...
SavantIC Semiconductor
Product Specification
Silicon
NPN Power
Transistors
BU2720DF
www.datasheet4u.com
DESCRIPTION ·With TO-3PFa package ·High voltage ·High speed switching ·Built-in damper diode APPLICATIONS ·For use in horizontal deflection circuits of colour TV receivers.
PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION
Absolute maximum ratings(Ta=25 )
SYMBOL VCBO VCEO IC ICM IB IBM Ptot Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Collector current (DC) Collector current -peak Base Collector current (DC) Base current -peak Total power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base VALUE 1700 825 10 25 10 14 45 150 -65~150 UNIT V V A A A A W
SavantIC Semiconductor
Product Specification
Silicon
NPN Power
Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER CONDITIONS MIN
www.datasheet4u.com
BU2720DF
SYMBOL
TYP.
MAX
UNIT
VCEO(SUS)
Collector-emitter sustaining voltage
IC=100mA ;IB=0,L=25mH
825
V
V(BR)EBO
Emitter-base breakdown voltage
IE=600mA ;IC=0
7.5
V
VCEsat
Collector-emitter saturation voltage
IC=5.5A ;IB=1.38 A
1.0
V
VBEsat
Base-emitter saturation voltage
IC=5.5A ;IB=1.38 A VCE=BVCES; VBE=0 Tj=125 VEB=7.5V; IC=0 100
1.0 1.0 2.0 300
V
ICES
Collector cut-off current
mA
IEBO
Emitter cut-off current
mA
hFE-1
DC current gain
IC=0.1A ; VCE=5V
22
hFE-2
DC current gain
IC=5.5A ; VCE=1V
4
5.5
7.5
2
SavantIC Semiconductor
Product Specific...