POWER TRANSISTOR. BUT11A Datasheet


BUT11A TRANSISTOR. Datasheet pdf. Equivalent


BUT11A


SILICON POWER TRANSISTOR
SavantIC Semiconductor

Product Specification

Silicon NPN Power Transistors
DESCRIPTION ·With TO-220C package www.datasheet4u.com ·High voltage ,high speed APPLICATIONS ·Converters ·Inverters ·Switching regulators ·Motor control systems
PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION

BUT11 BUT11A

Absolute maximum ratings (Tc=25 )
SYMBOL VCBO PARAMETER Collector-base voltage BUT11 BUT11A BUT11 BUT11A CONDITIONS Open emitter VALUE 850 1000 400 450 7 5 10 2 Tmb425 100 0.8 150 -65~150 UNIT V

VCEO VEBO IC ICM IB Ptot Tf Tj Tstg

Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-Peak Base current Total power dissipation Fall time Junction temperature Storage temperature

Open base Open collector

V V A A A W µs

THERMAL CHARACTERISTICS
SYMBOL Rth j-mb PARAMETER Thermal resistance from junction to mounting base VALUE 1.25 UNIT K/W

SavantIC Semiconductor

Product Specification

Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER BUT11 IC=0.1A; IB=0, L=25mH BUT11A BUT11 BUT11A BUT11 BUT11A IC=3A; IB=0.6A CONDITIONS
www.datasheet4u.com

BUT11 BUT11A

SYMBOL

MIN 400

TYP.

MAX

UNIT

VCEO(SUS)

Collector-emitter sustaining voltage

V 450

VCEsat

Collector-emitter saturation voltage

1.5 IC=2.5A; IB=0.5A IC=3A; IB=0.6A 1.3 IC=2.5A; IB=0.5A VCE=Rated VCES ;VBE=0 Tj=125 VEB=9V; I...



BUT11A
SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
BUT11 BUT11A
DESCRIPTION
·With TO-220C package
www.dat·aHshigeeht4vuo.clotamge ,high speed
APPLICATIONS
·Converters
·Inverters
·Switching regulators
·Motor control systems
PINNING
PIN
DESCRIPTION
1 Base
2
Collector;connected to
mounting base
3 Emitter
Absolute maximum ratings (Tc=25 )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
BUT11
BUT11A
VCEO
BUT11
Collector-emitter voltage
BUT11A
VEBO
Emitter-base voltage
IC Collector current (DC)
ICM Collector current-Peak
IB Base current
Ptot Total power dissipation
Tf Fall time
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
Tmb425
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-mb
Thermal resistance from junction to mounting base
VALUE
850
1000
400
450
7
5
10
2
100
0.8
150
-65~150
UNIT
V
V
V
A
A
A
W
µs
VALUE
1.25
UNIT
K/W

BUT11A
SavantIC Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
www.datasheet4u.com
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS)
Collector-emitter
sustaining voltage
BUT11
BUT11A
IC=0.1A; IB=0, L=25mH
VCEsat
Collector-emitter
saturation voltage
BUT11
BUT11A
IC=3A; IB=0.6A
IC=2.5A; IB=0.5A
VBEsat
ICES
IEBO
Base-emitter
saturation voltage
BUT11
BUT11A
Collector cut-off current
Emitter cut-off current
IC=3A; IB=0.6A
IC=2.5A; IB=0.5A
VCE=Rated VCES ;VBE=0
Tj=125
VEB=9V; IC=0
hFE-1
DC current gain
IC=5mA ; VCE=5V
hFE-2
DC current gain
IC=0.5A ; VCE=5V
Switching times resistive load
ton Turn-on time
ts Storage time
tf Fall time
Switching times inductive load
ts Storage time
tf Fall time
For BUT11
IC=3A ;IB1=- IB2=0.6A
For BUT11A
IC=2.5A; IB1=- IB2=0.5A
For BUT11
IC=3A ;IB=0.6A
For BUT11A
IC=2.5A ;IB =0.5A
Product Specification
BUT11 BUT11A
MIN TYP. MAX UNIT
400
V
450
1.5 V
1.3 V
1.0
2.0
mA
10 mA
10 35
10 35
1.0 µs
4.0 µs
0.8 µs
1.4 µs
0.15 µs
2




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)