Plastic-Encapsulated Transistors. 2SC1959 Datasheet

2SC1959 Transistors. Datasheet pdf. Equivalent

Part 2SC1959
Description Plastic-Encapsulated Transistors
Feature Transys Electronics L I M I T E D TO-92 Plastic-Encapsulated Transistors 2SC1959 TRANSISTOR (NPN).
Manufacture TRANSYS
Datasheet
Download 2SC1959 Datasheet



2SC1959
Transys
Electronics
LIMITED
TO-92 Plastic-Encapsulated Transistors
2SC1959 TRANSISTOR (NPN)
TO-92
www.datasheet4u.coFmEATURE
Power dissipation
PCM:
0.5 W (Tamb=25)
Collector current
ICM: 0.5
Collector-base voltage
A
V(BR)CBO:
35 V
Operating and storage junction temperature range
Tstg: -55to +150
1. EMITTER
2. COLLECTOR
3. BSAE
123
TJ: 150
ELECTRICAL CHARACTERISTICS (Tamb=25unless otherwise specified)
Parameter
Symbol
Test conditions
MIN TYP
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
V(BR)CBO
Ic= 100µA , IE=0
V(BR)CEO
IC= 1 mA , IB=0
V(BR)EBO
IE= 100µA, IC=0
ICBO VCB= 35V , IE=0
IEBO VEB= 5 V , IC=0
hFE (1)
VCE=1 V, IC= 100mA
hFE (2)
VCE=6 V, IC= 400mA
VCE(sat)
IC= 100 mA, IB= 10 mA
VBE VCE= 1V, IC= 100 mA
35
30
5
70
25
MAX
0.1
0.1
400
UNIT
V
V
V
µA
µA
0.25 V
1.0 V
Transition frequency
CLASSIFICATION OF hFE
Rank
Range
hFE (1)
hFE (2)
fT
O
70-140
25(min)
VCE= 12 V, IC= 2mA
200
Y
120-240
40(min)
MHz
GR
200-400





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