PLANAR TRANSISTOR. 2SC1959 Datasheet

2SC1959 TRANSISTOR. Datasheet pdf. Equivalent

Part 2SC1959
Description NPN EPITAXIAL PLANAR TRANSISTOR
Feature DC COMPONENTS CO., LTD. R 2SC1959 DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS OF NPN EPITAXI.
Manufacture Dc Components
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Datasheet
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2SC1959
DC COMPONENTS CO., LTD.
R DISCRETE SEMICONDUCTORS
2SC1959
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Description
Designed for audio frequency low-power amplifier
applications.
TO-92
Pinning
1 = Emitter
2 = Collector
3 = Base
Absolute Maximum Ratings(TA=25oC)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
PD
TJ
TSTG
Rating
35
30
5
500
500
+150
-55 to +150
Unit
V
V
V
mA
mW
oC
oC
.190(4.83)
.170(4.33)
.190(4.83)
.170(4.33)
.500
(12.70)
Min
2o Typ
2o Typ
.050
(1.27)Typ
.022(0.56)
.014(0.36)
.100
(2.54)
Typ
.022(0.56)
.014(0.36)
321
.148(3.76)
.132(3.36)
.050
5oTyp. 5oTyp. (1.27)Typ
Dimensions in inches and (millimeters)
Electrical Characteristics
(Ratings at 25oC ambient temperature unless otherwise specified)
Characteristic
Symbol Min
Collector-Base Breakdown Volatge
BVCBO 35
Collector-Emitter Breakdown Voltage BVCEO 30
Emitter-Base Breakdown Volatge
BVEBO
5
Collector Cutoff Current
ICBO
-
Emitter Cutoff Current
Collector-Emitter Saturation Voltage(1)
Base-Emitter On Voltage(1)
IEBO
VCE(sat)
VBE(on)
-
-
-
DC Current Gain(1)
hFE1
hFE2
120
40
Transition Frequency
fT -
Output Capacitance
Cob -
(1)Pulse Test: Pulse Width 380µs, Duty Cycle 2%
Typ
-
-
-
-
-
-
-
-
-
300
7
Max
-
-
-
0.1
0.1
0.25
1
240
-
-
-
Unit
V
V
V
µA
µA
V
V
-
-
MHz
pF
Test Conditions
IC=100µA, IE=0
IC=1mA, IB=0
IE=10µA, IC=0
VCB=35V, IE=0
VEB=5V, IC=0
IC=100mA, IB=10mA
IC=100mA, VCE=1V
IC=100mA, VCE=1V
IC=400mA, VCE=6V
IC=20mA, VCE=6V
VCB=6V, f=1MHz, IE=0





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