POWER Transistor. AOD452A Datasheet

AOD452A Transistor. Datasheet pdf. Equivalent

Part AOD452A
Description N-Channel SDMOSTM POWER Transistor
Feature AOD452A TM www.datasheet4u.com N-Channel SDMOS POWER Transistor General Description The AOD452A/L is.
Manufacture Alpha & Omega Semiconductors
Datasheet
Download AOD452A Datasheet



AOD452A
AOD452A
www.datasNhe-eCt4uh.caonmnel SDMOSTM POWER Transistor
General Description
Features
The AOD452A/L is fabricated with SDMOSTM trench
technology that combines excellent RDS(ON) with low
gate charge.The result is outstanding efficiency with
controlled switching behavior. This universal technology
is well suited for PWM, load switching and general
purpose applications. AOD452A and AOD452AL are
electrically identical.
-RoHS Compliant
-AOD452AL is Halogen Free
VDS (V) = 25V
ID = 55A
RDS(ON) < 8m
RDS(ON) <14m
(V GS = 10V)
(VGS = 10V)
(VGS = 4.5V)
100% UIS Tested!
100% Rg Tested!
Top View
D
TO-252
D-PAK Bottom View
D
GS
SG
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TC=25°C
CurrentG
TC=100°C
Pulsed Drain Current C
Pulsed Forward Diode CurrentC
Avalanche Current C
Repetitive avalanche energy L=50µH C
ID
IDM
ISM
IAR
EAR
TC=25°C
Power Dissipation B TC=100°C
PD
TA=25°C
Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range
TJ, TSTG
G
Maximum
25
±20
55
43
120
120
35
31
50
25
2.5
1.6
-55 to 175
S
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Case B
Maximum Junction-to-TAB B
t 10s
Steady-State
Steady-State
Steady-State
Symbol
RθJA
RθJC
RθJC-TAB
Typ
14.2
39
2.5
2.7
Max
20
50
3
3.2
Alpha & Omega Semiconductor, Ltd.
Units
V
V
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
°C/W
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AOD452A
AOD452A
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
www.daBtaVshDeSSet4u.coDmrain-Source Breakdown Voltage
ID=250uA, VGS=0V
25
V
IDSS Zero Gate Voltage Drain Current
VDS=25V, VGS=0V
TJ=55°C
10
50
µA
IGSS Gate-Body leakage current
VDS=0V, VGS=±20V
100 nA
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250µA
1.2 2 3 V
ID(ON)
On state drain current
VGS=10V, VDS=5V
120
A
RDS(ON) Static Drain-Source On-Resistance
VGS=10V, ID=30A
TJ=125°C
6
8.6
8
12
m
VGS=4.5V, ID=20A
11.5 14 m
gFS Forward Transconductance
VDS=5V, ID=30A
50 S
VSD Diode Forward Voltage
IS=1A, VGS=0V
0.7 1
V
IS Maximum Body-Diode Continuous Current
55 A
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=12.5V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
990 1180 1450
210 275 350
125 175 245
1.1 1.7 2.5
pF
pF
pF
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
18 21.7 26
nC
Qg(4.5V) Total Gate Charge
Qgs Gate Source Charge
VGS=10V, VDS=12.5V, ID=30A
9 11 13 nC
34
5 nC
Qgd Gate Drain Charge
4.5 6.4 9 nC
tD(on)
Turn-On DelayTime
6.8 ns
tr Turn-On Rise Time
VGS=10V, VDS=12.5V, RL=0.42,
13.8
ns
tD(off)
Turn-Off DelayTime
RGEN=3
21.5 ns
tf Turn-Off Fall Time
8.7 ns
trr Body Diode Reverse Recovery Time IF=30A, dI/dt=500A/µs
8.4 10.6 13
ns
Qrr Body Diode Reverse Recovery Charge IF=30A, dI/dt=500A/µs
13 16 20 nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power
dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the
user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation
limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C.
D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=175°C.
G. The maximum current rating is limited by bond-wires.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve
provides a single pulse rating.
Rev0 : July 2008
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com





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