LX5503E

LX5503E TM ® InGaP HBT 4 – 6GHz Power Amplifier P RODUCTION D ATA S HEET DESCRIPTION KEY FEATURES ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ Advanced InGaP HBT 4.9-5.85GHz Operation Single-Polarity 3.3V Supply Total Current ~ 150mA for Pout=18dBm at 5.25GHz P1dB ~ +26dBm across 4.9~5.85GHz Power Gain ~ 21dB at 5.25GHz & Pout=18dBm Power Gain ~ 16dB at 5.85GHz & Pout=18dBm EVM ~ 3% for 64QAM/ 54Mbps & Pout=18dBm Excellent Temperature Performance Simple Input/Output Match Minimal External Components Optional low-cost LDO for Optimal System Performance 2 Small Footprint: 3x3mm Low Profile: 0.9mm The LX5503E www.datasheet4u.com is a power amplifier optimized for high-efficiency lowpower applications in the FCC Unlicensed National Information Infrastructure (U-NII) band, Europe HyperLAN2, and Japan WLAN in the 4.9-5.85GHz frequency range. The PA is implemented as a two-stage monolithic microwave integrated circuit (MMIC) with active bias and input/output pre-matching. The device is manufactured with an InGaP/GaAs Heterojunction Bipolar Transistor (HBT) IC process (MOCVD). It operates at a single supply of 3.3V with +26dBm of P1dB, and power gain of 21dB between 4.9-5.35GHz and 16dB up to 5.85GHz. For +18dBm OFDM output power (64QAM, 54Mbps), the PA provides a very low EVM (Error Vector Magnitude) of 3%, and consumes 150mA total DC current. The LX5503E is available in a 16pin 3x3mm2 micro-lead package (MLP). The compact footprint, low profile, and excellent thermal capability of the micro-l...