Power Amplifier. LX5503E Datasheet

LX5503E Amplifier. Datasheet pdf. Equivalent

Part LX5503E
Description InGaP HBT 4 - 6GHz Power Amplifier
Feature LX5503E TM ® InGaP HBT 4 – 6GHz Power Amplifier P RODUCTION D ATA S HEET DESCRIPTION KEY FEATURES.
Manufacture Microsemi Corporation
Datasheet
Download LX5503E Datasheet



LX5503E
LX5503E
TM ® InGaP HBT 4 – 6GHz Power Amplifier
PRODUCTION DATA SHEET
DESCRIPTION
www.datTahsheeLetX4u5.5co0m3E is a power amplifier For +18dBm OFDM output power
optimized for high-efficiency low- (64QAM, 54Mbps), the PA provides a
power applications in the FCC very low EVM (Error Vector Mag-
Unlicensed National Information nitude) of 3%, and consumes 150mA
Infrastructure (U-NII) band, Europe total DC current.
HyperLAN2, and Japan WLAN in the The LX5503E is available in a 16-
4.9-5.85GHz frequency range. The pin 3x3mm2 micro-lead package
PA is implemented as a two-stage (MLP). The compact footprint, low
monolithic microwave integrated profile, and excellent thermal capability
circuit (MMIC) with active bias and of the micro-lead package make the
input/output pre-matching. The device LX5503E an ideal solution for
is manufactured with an InGaP/GaAs broadband, medium-gain power amp-
Heterojunction Bipolar Transistor lifier requirements for IEEE 802.11a,
(HBT) IC process (MOCVD). It and HiperLAN2 portable WLAN
operates at a single supply of 3.3V applications.
with +26dBm of P1dB, and power
gain of 21dB between 4.9-5.35GHz
and 16dB up to 5.85GHz.
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
KEY FEATURES
ƒ Advanced InGaP HBT
ƒ 4.9-5.85GHz Operation
ƒ Single-Polarity 3.3V Supply
ƒ Total Current ~ 150mA for
Pout=18dBm at 5.25GHz
ƒ P1dB ~ +26dBm across
4.9~5.85GHz
ƒ Power Gain ~ 21dB at 5.25GHz
& Pout=18dBm
ƒ Power Gain ~ 16dB at 5.85GHz
& Pout=18dBm
ƒ EVM ~ 3% for 64QAM/ 54Mbps
& Pout=18dBm
ƒ Excellent Temperature
Performance
ƒ Simple Input/Output Match
ƒ Minimal External Components
ƒ Optional low-cost LDO for
Optimal System Performance
ƒ Small Footprint: 3x3mm2
ƒ Low Profile: 0.9mm
APPLICATIONS/BENEFITS
ƒ FCC-UNII Wireless
ƒ IEEE 802.11a
ƒ HiperLAN2
PRODUCT HIGHLIGHT
PACKAGE ORDER INFO
LQ
Plastic MLPQ
16-Pin
LX5503ELQ
RoHS Compliant / Pb-free Transition DC: 0418
Note: Available in Tape & Reel. Append the letters “TR” to the
part number.
(i.e. LX5503ELQ-TR)
This device is classified as ESD Level 0 in accordance with
JESD22-A114-B, (HBM) testing. Appropriate ESD procedures
should be observed when handling this device.
Copyright © 2000
Rev. 1.2d, 2005-08-18
Microsemi
Integrated Products Division
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 1



LX5503E
LX5503E
TM ® InGaP HBT 4 – 6GHz Power Amplifier
PRODUCTION DATA SHEET
ABSOLUTE MAXIMUM RATINGS
www.dDatCasSheueptp4luy.cVomoltage, RF off ...............................................................................6V
Collector Current ........................................................................................500mA
Total Power Dissipation....................................................................................3W
RF Input Power........................................................................................... 10dBm
Operation Ambient Temperature .......................................................-40 to +85°C
Maximum Junction Temperature (TJMAX) .................................................... 150°C
Storage Temperature.......................................................................... -65 to 150°C
Peak Package Solder Reflow Temp. (40 seconds maximum exposure) ........ 260°C (+0, -5)
Note: Exceeding these ratings could cause damage to the device. All voltages are with respect to
Ground. Currents are positive into, negative out of specified terminal.
PACKAGE PIN OUT
13 14 15 16
12 1
11 2
10 3
94
87 65
LQ PACKAGE
(Bottom View)
RoHS / Pb-free 100% Matte Tin Lead Finish
Name Pin #
FUNCTIONAL PIN DESCRIPTION
Description
RF IN
2, 3
RF input for the power amplifier. This pin is DC-shorted to GND but AC-coupled to the transistor base
of the first stage.
VB1 6 Bias current control voltage for the first stage.
VB2
7
Bias current control voltage for the second stage. The VB2 pin can be connected with VB1 into a single
reference voltage (Vref) through an external resistor bridge.
VCC
9
Supply voltage for the Bias reference and control circuits. This pin can be combined with both VC1 and
VC2 pins, resulting in a single supply voltage (referred to as Vc).
RF OUT 10, 11
RF output for the power amplifier. This pin is AC-coupled and does not require a DC-blocking
capacitor.
Power supply for first stage amplifier. The VC1 feedline should be terminated with a 220pF bypass
VC1 15 capacitor as close to the device as possible, followed by a 1µF bypass capacitor at the supply side.
This pin can be combined with VC2 and VCC pins, resulting in a single supply voltage (Vc).
Power supply for second stage amplifier. The VC2 feedline should be terminated with a 220pF bypass
VC2 14 capacitor as close to the device as possible, followed by a 1µF bypass capacitor at the supply side.
This pin can be combined with VC1 and VCC, resulting in a single supply voltage (Vc).
GND
Center The center metal base of the MLPQ package provides both DC/RF ground as well as heat sink for the
Metal power amplifier.
Copyright © 2000
Rev. 1.2d, 2005-08-18
Microsemi
Integrated Products Division
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 2





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