Power Amplifier. LX5506 Datasheet

LX5506 Amplifier. Datasheet pdf. Equivalent

Part LX5506
Description InGaP HBT 4.5 - 6GHz Power Amplifier
Feature LX5506 TM ® InGaP HBT 4.5 – 6GHz Power Amplifier P RODUCTION D ATA S HEET DESCRIPTION KEY FEATURE.
Manufacture Microsemi Corporation
Datasheet
Download LX5506 Datasheet



LX5506
LX5506
TM ® InGaP HBT 4.5 – 6GHz Power Amplifier
PRODUCTION DATA SHEET
DESCRIPTION
www.datTahsheeeLtX4u5.c5o0m6 is a power amplifier
designed for the FCC Unlicensed
National Information Infrastructure
(U-NII) band, HyperLAN2 and Japan
WLAN applications in the 4.9-5.95
GHz frequency range. The PA is
implemented as a three-stage
monolithic microwave integrated
circuit (MMIC) with active bias and
complete on-chip input matching. The
device is manufactured with an
InGaP/GaAs Heterojunction Bipolar
Transistor (HBT) IC process
(MOCVD). It operates at a single
positive voltage supply of 3.3V
(nominal), with +26dBm of P1dB and
up to 23dB power gain in the 5.15 -
5.85GHz frequency range with a
simple output matching capacitor pair.
For OFDM operation (64QAM,
54Mbps), the PA provides +18dBm
linear output power with a very low
EVM (Error-Vector Magnitude) of
3%, and consumes about 190mA total
DC current. At higher supply voltage
of 5V, the same device provides
+24dBm linear OFDM output power
with 5% EVM.
The LX5506 is available in a 16-pin
3mmx3mm micro-lead package (MLP).
The compact footprint, low profile, and
excellent thermal capability of the MLP
package makes the LX5506 an ideal
solution for broadband, high-gain
power amplifier requirements for IEEE
802.11a, and HiperLAN2 portable
WLAN applications.
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
KEY FEATURES
ƒ Advanced InGaP HBT
ƒ Single-Polarity 3.3V Supply
ƒ EVM ~ 3% at Pout=18dBm for
64QAM/ 54Mbps OFDM
ƒ P1dB ~ +26dBm
ƒ Power Gain ~ 23dB at
5.25GHz for Icq ~100mA
ƒ Power Gain ~ 21dB at
5.85GHz for Icq ~100mA
ƒ Total Current ~190mA at
Pout=18dBm at 5.25GHz
ƒ ACPR ~ -50dBc at 30MHz
Offset at Pout=18dBm
ƒ Complete On-Chip Input Match
ƒ Simple Output Capacitor Match
ƒ Small Footprint: 3x3mm2
ƒ Low Profile: 0.9mm
APPLICATIONS
ƒ FCC U-NII Wireless
ƒ IEEE 802.11a
ƒ HiperLAN2
ƒ 5GHz Cordless Phone
PRODUCT HIGHLIGHT
Copyright © 2003
Rev. 1.2c, 2005-08-18
PACKAGE ORDER INFO
LQ
Plastic MLPQ
16-Pin
LX5506LQ
RoHS Compliant / Pb-free Transition DC: 0418
Note: Available in Tape & Reel. Append the letters “TR” to
the part number. (i.e. LX5506LQ-TR)
This device is classified as ESD Level 0 in accordance with
JESD22-A114-B, (HBM) testing. Appropriate ESD
procedures should be observed when handling this device.
Microsemi
Integrated Products Division
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 1



LX5506
LX5506
TM ® InGaP HBT 4.5 – 6GHz Power Amplifier
PRODUCTION DATA SHEET
ABSOLUTE MAXIMUM RATINGS
www.dDatCasSheueptp4luy.cVomoltage, RF off ...............................................................................6V
Collector Current ........................................................................................600mA
Total Power Dissipation....................................................................................3W
RF Input Power.........................................................................................+15dBm
Maximum Junction Temperature (TJ max) .................................................. 150°C
Operation Ambient Temperature .......................................................-40 to +85°C
Storage Temperature........................................................................-65 to +150°C
Peak Package Solder Reflow Temperature (40 second max. exposure)........ 260°C (+0, -5)
Note: Exceeding these ratings could cause damage to the device. All voltages are with respect to
Ground. Currents are positive into, negative out of specified terminal.
PACKAGE PIN OUT
N.C.
RF OUT
RF OUT
N.C.
13 14 15 16
12 * 1
11 2
10 3
94
87 65
N.C.
RF IN
RF IN
VCC
* Pad is Ground
LQ PACKAGE
(Bottom View)
RoHS / Pb-free 100% Matte Tin Lead Finish
Name
RF IN
VCC
VB1
VB2
VB3
RF OUT
VC1
VC2
VC3
GND
N.C.
FUNCTIONAL PIN DESCRIPTION
Description
RF input for the power amplifier. This pin is DC-shorted to GND but AC-coupled to the transistor base of the first
stage.
Supply voltage for the bias reference and control circuits.
Bias current control voltage for the first stage.
Bias current control voltage for the second stage.
Bias current control voltage for the third stage.
RF output for the power amplifier. This pin is AC-coupled and does not require a DC-blocking capacitor.
Power supply for the first stage amplifier.
Power supply for the second stage amplifier.
Power supply for the third stage amplifier.
The center metal base of the MLP package provides both DC and RF ground as well as heat sink for the power
amplifier.
These are unused pins and not connected to the device. They can be treated either as open pins or connected
to ground for better heat dissipation.
Copyright © 2003
Rev. 1.2c, 2005-08-18
Microsemi
Integrated Products Division
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
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