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Power Amplifier. LX5506B Datasheet |
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LX5506B
TM ® InGaP HBT 4 – 6GHz Power Amplifier
PRODUCTION DATA SHEET
DESCRIPTION
www.datTahsheeLetX4u5.5co0m6B is a power amplifier supply of 3.3V (nominal), with
optimized for the FCC Unlicensed +26dBm of P1dB and up to 25dB
National Information Infrastructure power gain in the 5.15 - 5.85GHz
(U-NII) band, HyperLAN2 and Japan frequency range with a simple output
WLAN applications in the 4.9-5.85 matching capacitor pair.
GHz frequency range. The PA is LX5506B is available in a 16-pin
implemented as a three-stage 3mmx3mm micro-lead package (MLP).
monolithic microwave integrated The compact footprint, low profile, and
circuit (MMIC) with active bias, on- excellent thermal capability of the MLP
chip input matching and output pre- package makes the LX5506B an ideal
matching. It also features an on-chip solution for broadband, high-gain
output power detector to help reduce power amplifier requirements for IEEE
BOM cost and PCB board space for 802.11a, and HiperLAN2 portable
system implementations. The device is WLAN applications.
manufactured with an InGaP/GaAs
Heterojunction Bipolar Transistor
(HBT) IC process (MOCVD). It
operates with a single positive voltage
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
PRODUCT HIGHLIGHT
KEY FEATURES
Advanced InGaP HBT
Single-Polarity Voltage Supply
EVM ~ 2.5% at Pout=+18dBm,
64QAM/ 54Mbps OFDM (3.3V)
Power Gain ~ 25dB at 5.25GHz
& Pout=+18dBm
Power Gain ~ 21dB at 5.85GHz
& Pout=+18dBm
P1dB ~ +26dBm across 5.15 –
5.85 GHz
Total Current ~ 170mA for
Pout=+18dBm at 5.25GHz
Total Current ~ 200mA for
Pout=+20dBm at 5.25GHz
ACPR ~ -48dBc at 30MHz
Offset at Pout=+18dBm
Integrated Power Detector
Complete On-Chip Input Match
Simple Output Capacitor Match
Small Footprint: 3x3mm2
Low Profile: 0.9mm
APPLICATIONS/BENEFITS
FCC U-N11 Wireless
IEEE 802.11a
HiperLAN2
LQ
PACKAGE ORDER INFO
Plastic MLPQ
16-Pin
RoHS Compliant / Pb-free
LX5506BLQ
Note: Available in Tape & Reel. Append the letters “TR” to the part number.
(i.e. LX5506BLQ-TR)
This device is classified as ESD Level 0 in accordance with MIL-STD-883,
Method 3015 (HBM) testing. Appropriate ESD procedures should be
observed when handling this device.
Copyright © 2003
Rev. 1.0b, 2005-03-02
Microsemi
Integrated Products Division
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 1
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LX5506B
TM ® InGaP HBT 4 – 6GHz Power Amplifier
PRODUCTION DATA SHEET
ABSOLUTE MAXIMUM RATINGS
www.datasheet4u.com
DC Supply Voltage, RF Off...............................................................................6V
Collector Current ........................................................................................500mA
Total Power Dissipation....................................................................................3W
RF Input Power........................................................................................... 15dBm
Thermal Resistance (Junction-to-Case, θJC).................................................6°C/W
Maximum Junction Temperature (TJ max) .................................................. 150°C
Operation Ambient Temperature .......................................................-40 to +85°C
Storage Temperature.......................................................................... -65 to 150°C
Package Peak Temp for Solder Reflow (40 Seconds Maximum Exposure). 260°C (+0, -5)
Note: Exceeding these ratings could cause damage to the device. All voltages are with respect to
Ground. Currents are positive into, negative out of specified terminal.
PACKAGE PIN OUT
LQ PACKAGE
(Bottom View)
RoHS / Pb-free 100% Matte Tin Lead Finish
Name
RF IN
Pin #
2, 3
VCC
VB1
VB2
VB3
DET
4
5
6
7
9
RF OUT
VC1
VC2
VC3
GND
NC
10, 11
16
15
14
Center
Metal
1, 8,
12,13
FUNCTIONAL PIN DESCRIPTION
Description
RF input for the power amplifier. This pin is DC-shorted to GND but AC-coupled to the transistor base
of the first stage.
Supply voltage for the bias reference and control circuits. This pin can be combined with VC1, VC2 and
VC3 pins, resulting in a single supply voltage (referred to as Vc).
Bias control voltage for the first stage.
Bias control voltage for the second stage.
Bias control voltage for the third stage.
Detector output for the third stage PA output power.
RF output for the power amplifier. This pin is DC-blocked from the collector of the output stage.
DC supply voltage for the first stage amplifier.
DC supply voltage for the second stage amplifier.
DC supply voltage for the third stage amplifier.
The center metal base of the MLP package provides both DC/RF ground as well as heat sink for the
power amplifier.
These pins are unused and not connected to the device inside the package. They can be treated either
as open (floating) pins, or connected to ground metal.
Copyright © 2003
Rev. 1.0b, 2005-03-02
Microsemi
Integrated Products Division
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
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