LX5506B

LX5506B TM ® InGaP HBT 4 – 6GHz Power Amplifier P RODUCTION D ATA S HEET DESCRIPTION KEY FEATURES ƒ Advanced InGaP HBT ƒ Single-Polarity Voltage Supply ƒ EVM ~ 2.5% at Pout=+18dBm, 64QAM/ 54Mbps OFDM (3.3V) ƒ Power Gain ~ 25dB at 5.25GHz & Pout=+18dBm ƒ Power Gain ~ 21dB at 5.85GHz & Pout=+18dBm ƒ P1dB ~ +26dBm across 5.15 – 5.85 GHz ƒ Total Current ~ 170mA for Pout=+18dBm at 5.25GHz ƒ Total Current ~ 200mA for Pout=+20dBm at 5.25GHz ƒ ACPR ~ -48dBc at 30MHz Offset at Pout=+18dBm ƒ Integrated Power Detector ƒ Complete On-Chip Input Match ƒ Simple Output Capacitor Match ƒ Small Footprint: 3x3mm2 ƒ Low Profile: 0.9mm APPLICATIONS/BENEFITS The LX5506B www.datasheet4u.com is a power amplifier optimized for the FCC Unlicensed National Information Infrastructure (U-NII) band, HyperLAN2 and Japan WLAN applications in the 4.9-5.85 GHz frequency range. The PA is implemented as a three-stage monolithic microwave integrated circuit (MMIC) with active bias, onchip input matching and output prematching. It also features an on-chip output power detector to help reduce BOM cost and PCB board space for system implementations. The device is manufactured with an InGaP/GaAs Heterojunction Bipolar Transistor (HBT) IC process (MOCVD). It operates with a single positive voltage supply of 3.3V (nominal), with +26dBm of P1dB and up to 25dB power gain in the 5.15 - 5.85GHz frequency range with a simple output matching capacitor pair. LX5506B is available in a 16-pin 3mmx3mm micro-lead package (...