Power Amplifier. LX5506E Datasheet

LX5506E Amplifier. Datasheet pdf. Equivalent

Part LX5506E
Description InGaP HBT 4 - 6GHz Power Amplifier
Feature LX5506E I N T E G R A T E D P R O D U C T S InGaP HBT 4 – 6GHz Power Amplifier P RELIMINARY D ATA S.
Manufacture Microsemi Corporation
Datasheet
Download LX5506E Datasheet



LX5506E
INTEGRATED PRODUCTS
LX5506E
InGaP HBT 4 – 6GHz Power Amplifier
PRELIMINARY DATA SHEET
DESCRIPTION
www.datTahsheeLetX4u5.5co0m6E is a power amplifier differential output power detector pair
optimized for the FCC Unlicensed to help reduce BOM cost and PCB
National Information Infrastructure board space for system implementation.
(U-NII) band, HyperLAN2 and Japan LX5506E is available in a 16-pin
WLAN applications in the 4.9-5.85 3mmx3mm micro-lead package (MLP).
GHz frequency range. The PA is The compact footprint, low profile, and
implemented as a three-stage excellent thermal capability of the MLP
monolithic microwave integrated package makes the LX5506E an ideal
circuit (MMIC) with active bias, on- solution for broadband, high-gain
chip input matching and output pre- power amplifier requirements for IEEE
matching. The device is manufactured 802.11a, and Hiperlan2 portable WLAN
with an InGaP/GaAs Heterojunction applications.
Bipolar Transistor (HBT) IC process
(MOCVD). It also has an integrated
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
KEY FEATURES
ƒ Advanced InGaP HBT
ƒ 4.9-5.85GHz Operation
ƒ Single-Polarity 3.3V Supply
ƒ Total Current ~ 200mA for
Pout=19dBm at 5.25GHz
ƒ P1dB > +26dBm
ƒ Power Gain ~ 23dB at 5.25GHz
& Pout=19dBm
ƒ EVM ~ 3% for 64QAM/ 54Mbps
& Pout=19dBm
ƒ Integrated Power Detectors
ƒ On-Chip Input Match
ƒ Simple Output Match
ƒ Minimal External Components
ƒ Small Footprint: 3x3mm2
ƒ Low Profile: 0.9mm
APPLICATIONS/BENEFITS
ƒ FCC U-N11 Wireless
ƒ IEEE 802.11a
ƒ HiperLAN2
PRODUCT HIGHLIGHT
PACKAGE ORDER INFO
TJ (°C)
Plastic MLPQ
LQ 16-Pin
0 to 70
LX5506E-LQ
Note: Available in Tape & Reel.
Append the letter “T” to the part number.
(i.e. LX5506E-LQT)
Copyright 2000
Rev. 1.0, 2003-01-10
Microsemi
Integrated Products Division
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 1



LX5506E
INTEGRATED PRODUCTS
LX5506E
InGaP HBT 4 – 6GHz Power Amplifier
PRELIMINARY DATA SHEET
ABSOLUTE MAXIMUM RATINGS
www.dDatCasSheueptp4luy.cVomoltage, RF Off...............................................................................6V
Collector Current ........................................................................................500mA
Total Power Dissipation....................................................................................3W
RF Input Power........................................................................................... 10dBm
Operation Ambient Temperature .......................................................-40 to +85°C
Storage Temperature.......................................................................... -60 to 150°C
Note: Exceeding these ratings could cause damage to the device. All voltages are with respect to
Ground. Currents are positive into, negative out of specified terminal.
PACKAGE PIN OUT
13 14 15 16
12 1
11 2
10 3
94
87 65
LQ PACKAGE
(Bottom View)
Name
RF IN
Pin #
2, 3
FUNCTIONAL PIN DESCRIPTION
Description
RF input for the power amplifier. This pin is DC-shorted to GND but AC-coupled to the transistor base
of the first stage.
VCC
VB1
VB2
VB3
DET
REF
4
Supply voltage for the bias reference and control circuits. This pin can be combined with VC1, VC2 and
VC3 pins, resulting in a single supply voltage (referred to as Vc).
5 Bias control voltage for the first stage.
6 Bias control voltage for the second stage.
7 Bias control voltage for the third stage.
9 Detector output voltage for the third stage PA output power.
8 Detector output voltage for the reference power detector.
RF OUT 10, 11
RF output for the power amplifier. This pin is AC-coupled and does not require a DC-blocking
capacitor.
VC1 16 DC supply voltage for the first stage amplifier.
VC2 15 DC supply voltage for the second stage amplifier.
VC3 14 DC supply voltage for the third stage amplifier.
GND
Center The center metal base of the MLP package provides both DC/RF ground as well as heat sink for the
Metal power amplifier.
NC
1,12,13
These pins are unused and not connected to the device inside the package. They can be treated either
as open pins, or connected to ground for better heat dissipation.
Copyright 2000
Rev. 1.0, 2003-01-10
Microsemi
Integrated Products Division
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 2





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