Power Amplifier. LX5506M Datasheet

LX5506M Amplifier. Datasheet pdf. Equivalent

Part LX5506M
Description InGaP HBT 4.5 - 6GHz Power Amplifier
Feature LX5506M TM ® InGaP HBT 4.5 – 6GHz Power Amplifier P RODUCTION D ATA S HEET DESCRIPTION KEY FEATUR.
Manufacture Microsemi Corporation
Datasheet
Download LX5506M Datasheet



LX5506M
LX5506M
TM ® InGaP HBT 4.5 – 6GHz Power Amplifier
PRODUCTION DATA SHEET
DESCRIPTION
www.datTahsheeLetX4u5.5co0m6M is a power amplifier of up to 20% at maximum linear output
optimized for the FCC Unlicensed power for OFDM mask compliance. It
National Information Infrastructure also features an on-chip output power
(U-NII) band, HyperLAN2, and detector to help reduce BOM cost and
Japan’s WLAN applications in the board space in system implementation.
4.9-5.9 GHz frequency range. The PA The on-chip detector allows simple
is implemented as a three-stage interface with an external directional
monolithic microwave integrated coupler, providing accurate output
circuit (MMIC) with active bias, on- power level readings insensitive to
chip input matching and output pre- frequency, temperature, and load
matching. The device is manufactured VSWR.
with an InGaP/GaAs Heterojunction LX5506M is available in a 16-pin
Bipolar Transistor (HBT) IC process 3mmx3mm micro-lead package (MLP).
(MOCVD). It operates with a single The compact footprint, low profile, and
positive voltage supply of 3.3V excellent thermal capability of the MLP
(nominal), with up to +22dBm linear package makes the LX5506M an ideal
output power for 802.11a OFDM solution for broadband, high-gain
spectrum mask compliance, and low power amplifier requirements for IEEE
EVM of -30dB for up to +18dBm 802.11a, and HyperLAN2 portable
output power in the 4.9-5.9GHz band. WLAN applications.
LX5506M features high gain of up
to 30dB with low quiescent current of
90mA, and high power added efficiency
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
KEY FEATURES
ƒ Broadband 4.9-5.9GHz Operation
ƒ Advanced InGaP HBT
ƒ Single-Polarity 3.3V Supply
ƒ Power Gain ~ 30dB at 5.25GHz
ƒ Power Gain > ~28dB Across 4.9-
5.9GHz
ƒ EVM ~ -30dB at Pout=+17dBm at
5.25GHz
ƒ EVM ~ -30dB at Pout=+18dBm at
5.85GHz
ƒ Total Current ~140mA for Pout =
+17dBm at 5.25GHz (For High Duty
Cycle of 90%)
ƒ Maximum Linear Power ~ +22dBm
for OFDM Mask Compliance
ƒ Maximum Linear Efficiency ~ 20%
ƒ On-chip Output Power Detector with
Improved Frequency and Load-
VSWR Insensitivity
ƒ On-Chip Input Match
ƒ On-Chip RF Decoupling
ƒ Simple Output Match for Optimal
Broadband EVM
ƒ Small Footprint: 3x3mm2
ƒ Low Profile: 0.9mm
APPLICATIONS
ƒ FCC U-NII Wireless
ƒ IEEE 802.11a
ƒ HyperLAN2
ƒ 5GHz Cordless Phone
PRODUCT HIGHLIGHT
Copyright © 2005
Rev. 1.0a, 2005-11-02
PACKAGE ORDER INFO
TJ (°C)
Plastic MLPQ
LQ 16 pin
RoHS Compliant / Pb-free
0 to 70
LX5506MLQ
Note: Available in Tape & Reel. Append the letters “TR” to the part
number. (i.e. LX5506MLQ-TR)
Microsemi
Integrated Products Division
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 1



LX5506M
®
TM
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INFORMATION
Thank you for your interest in Microsemi® IPG products.
The full data sheet for this device contains proprietary information.
To obtain a copy, please contact your local Microsemi sales representative. The
name of your local representative can be obtained at the following link
http://www.microsemi.com/contact/contactfind.asp
or
Contact us directly by sending an email to:
IPGdatasheets@microsemi.com
Be sure to specify the data sheet you are requesting and include your company
name and contact information and or vcard.
We look forward to hearing from you.
Copyright
Microsemi
Integrated Products Division
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570





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