Power Transistors. BUH517 Datasheet

BUH517 Transistors. Datasheet pdf. Equivalent

BUH517 Datasheet
Recommendation BUH517 Datasheet
Part BUH517
Description Silicon NPN Power Transistors
Feature BUH517; SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BUH517 www.datasheet4.
Manufacture Savantic
Datasheet
Download BUH517 Datasheet





Savantic BUH517
SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
BUH517
DESCRIPTION
www.dat·aWshiethet4TuO.co-3mPML package
·High voltage,high speed
·Low collector saturation voltage
APPLICATIONS
·Horizontal deflection stage in standard and high
reslolution displays for TV’s and monitors.
·Switching power supplies for TV’s and monitors.
PINNING
PIN
DESCRIPTION
1 Base
2 Collector
3 Emitter
Fig.1 simplified outline (TO-3PML) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VCBO
Collector-base voltage
Open emitter
VCEO
Collector-emitter voltage
Open base
VEBO
Emitter-base voltage
Open collector
IC Collector current (DC)
ICM Collector current (Pulse)
IB Base current (DC)
IBM Base current (Pulse)
Ptot Total power dissipation
TC=25
Tj Operating junction temperature
Tstg Storage temperature
VALUE
1700
700
10
8
15
5
8
60
150
-65~150
UNIT
V
V
V
A
A
A
A
W



Savantic BUH517
SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
BUH517
CHARACTERISTICS
Tj=25 unless otherwise specified
www.datasheet4u.com
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=100mA; IB=0
V(BR)EBO Emitter-base breakdown voltage
IE=10mA; IC=0
VCEsat Collector-emitter saturation voltage IC=5A ;IB=1.25A
VBEsat
Base-emitter saturation voltage
ICES Collector cut-off current
IEBO Emitter cut-off current
IC=5A ;IB=1.25A
VCE=1700V; VBE=0
Tj=125
VEB=5V; IC=0
hFE DC current gain
IC=5A ; VCE=5V
Switching times
ts Storage time
tf Fall time
IC=5A;IB1=1.25A;IB2=2.5A;
VCC=400V
MIN TYP. MAX UNIT
700 V
10 V
1.5 V
1.3 V
1.0
2.0
mA
100 µA
6
2.7 3.9
190 280
µs
ns
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal resistance from junction to case
MAX
2.08
UNIT
/W
2



Savantic BUH517
SavantIC Semiconductor
Silicon NPN Power Transistors
PACKAGE OUTLINE
www.datasheet4u.com
Product Specification
BUH517
Fig.2 Outline dimensions
3





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