STB4NB80. 4NB80 Datasheet

4NB80 STB4NB80. Datasheet pdf. Equivalent

4NB80 Datasheet
Recommendation 4NB80 Datasheet
Part 4NB80
Description STB4NB80
Feature 4NB80; ® www.datasheet4u.com STB4NB80 N - CHANNEL 800V - 3Ω - 4A - TO-220/TO-220FP PowerMESH™ MOSFET PRELI.
Manufacture STMicroelectronics
Datasheet
Download 4NB80 Datasheet





STMicroelectronics 4NB80
® STB4NB80
www.datasheet4u.com N - CHANNEL 800V - 3- 4A - TO-220/TO-220FP
PowerMESHMOSFET
TYPE
VDSS
RDS(on)
ID
STB4NB80
STB4NB80FP
800 V
800 V
3.3
3.3
4A
4A
s TYPICAL RDS(on) = 3
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s VERY LOW INTRINSIC CAPACITANCES
s GATE CHARGE MINIMIZED
DESCRIPTION
Using the latest high voltage MESH OVERLAY
process, SGS-Thomson has designed an
advanced family of power MOSFETs with
outstanding performances. The new patent
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
PRELIMINARY DATA
3
1
D2PAK
TO-263
(Suffix "T4")
123
I2PAK
TO-262
(Suffix "-1")
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITCH MODE POWER SUPPLIES (SMPS)
s DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS
VDGR
VGS
ID
ID
IDM()
Ptot
Drain-source Voltage (VGS = 0)
Drain- gate Voltage (RGS = 20 k)
Gate-source Voltage
Drain Current (continuous) at Tc = 25 oC
Drain Current (continuous) at Tc = 100 oC
Drain Current (pulsed)
Total Dissipation at Tc = 25 oC
Derating Factor
dv/dt(1) Peak Diode Recovery voltage slope
VISO Insulation Withstand Voltage (DC)
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
() Pulse width limited by safe operating area
(*) Limited only by maximum temperature allowed
June 1998
Value
STB4NB80 STB4NB80FP
800
800
± 30
4 4(*)
2.4 2.4(*)
16 16
100 35
1 0.28
4.5 4.5
2000
-65 to 150
150
(1) ISD 4 A, di/dt 200 A/µs, VDD V(BR)DSS, Tj TJMAX
Unit
V
V
V
A
A
A
W
W/oC
V/ns
V
oC
oC
1/6



STMicroelectronics 4NB80
STB4NB80
THERMAL DATA
www.datasheRett4huj -.ccaosme
Rthj-amb
Rthc-sink
Tl
Thermal Resistance Junction-case
Max
Thermal Resistance Junction-ambient
Max
Thermal Resistance Case-sink
Typ
Maximum Lead Temperature For Soldering Purpose
TO-263
1
62.5
0.5
300
TO-262
3.6
oC/W
oC/W
oC/W
oC
AVALANCHE CHARACTERISTICS
Symbol
IAR
EAS
Parameter
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
Single Pulse Avalanche Energy
(starting Tj = 25 oC, ID = IAR, VDD = 50 V)
Max Value
4
230
Unit
A
mJ
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
OFF
Symbol
V(BR)DSS
IDSS
IGSS
Parameter
Test Conditions
Drain-source
Breakdown Voltage
ID = 250 µA VGS = 0
Zero Gate Voltage
VDS = Max Rating
Drain Current (VGS = 0) VDS = Max Rating
Tc = 125 oC
Gate-body Leakage
Current (VDS = 0)
VGS = ± 30 V
Min.
800
Typ. Max.
1
50
± 100
Unit
V
µA
µA
nA
ON ()
Symbol
VGS(th)
RDS(on)
ID(on)
Parameter
Test Conditions
Gate Threshold
Voltage
VDS = VGS ID = 250 µA
Static Drain-source On VGS = 10V ID = 2 A
Resistance
On State Drain Current VDS > ID(on) x RDS(on)max
VGS = 10 V
Min.
3
Typ.
4
Max.
5
Unit
V
3 3.3
4A
DYNAMIC
Symbol
gfs ()
Ciss
C oss
Crss
Parameter
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS > ID(on) x RDS(on)max ID = 2 A
VDS = 25 V f = 1 MHz VGS = 0
Min.
1.8
Typ.
Max.
Unit
S
700 920
95 126
9 12
pF
pF
pF
2/6



STMicroelectronics 4NB80
STB4NB80
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
www.datasheSety4mu.cbooml
td(on)
tr
Parameter
Turn-on Time
Rise Time
Test Conditions
VDD = 400 V ID = 2 A
RG = 4.7
VGS = 10 V
Qg Total Gate Charge
VDD = 640 V ID = 4 A VGS = 10 V
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
SWITCHING OFF
Symbol
tr(Voff)
tf
tc
Parameter
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
VDD = 640V ID = 4 A
RG = 4.7 VGS = 10 V
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
ISD
ISDM()
Source-drain Current
Source-drain Current
(pulsed)
VSD () Forward On Voltage
ISD =4 A VGS = 0
trr Reverse Recovery
Time
Qrr Reverse Recovery
Charge
ISD = 4 A di/dt = 100 A/µs
VDD = 100 V Tj = 150 oC
IRRM
Reverse Recovery
Current
() Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
() Pulse width limited by safe operating area
Min.
Typ.
14
8
Max.
20
12
Unit
ns
ns
21 29 nC
7 nC
9 nC
Min.
Typ.
12
9
16
Max.
17
13
22
Unit
ns
ns
ns
Min.
Typ.
Max.
4
16
Unit
A
A
1.6
600
3.3
11
V
ns
µC
A
3/6





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