Document
Preliminary data
HiPerFASTTM IGBT
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IXGK80N60A
VCES IC25 VCE(sat) tfi
= 600 V = 80 A = 2.7 V = 275 ns
Symbol VCES VCGR V GES V GEM I C25 I C90 I CM SSOA (RBSOA) PC TJ TJM Tstg Md Weight
Test Conditions TJ = 25°C to 150 °C TJ = 25° C to 150°C; R GE = 1 M Ω Continuous Transient TC = 25°C, limited by leads TC = 90°C TC = 25° C, 1 ms VGE = 15 V, TVJ = 125 °C, RG = 10 Ω Clamped inductive load, L = 30 µH TC = 25°C
Maximum Ratings TO-264 AA 600 600 ±20 ±30 80 80 200 ICM = 100 @ 0.8 VCES 500 -55 ... +150 150 -55 ... +150 V V V V A A A A W °C °C °C Nm/lb.in. g °C Features • International standard package JEDEC TO-264 AA • Two mached dice connected in parallel • Low VCE(sat) - for minimum on-state conduction losses • MOS Gate turn-on - drive simplicity Applications • • • • • AC motor speed control DC servo and robot drives DC choppers Uninterruptible power supplies (UPS) Switch-mode and resonant-mode power supplies
G C E C = Collector TAB = Collector
G = Gate E = Emitter
Mounting torque (M4)
0.9/6 10 300
Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10s
Symbol
Test Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 600 2.5 TJ = 25°C TJ = 125°C 5 400 2 ±100 2.7 V V µA mA nA V
BVCES VGE(th) ICES I GES VCE(sat)
IC IC
= 500 µA, VGE = 0 V = 500 µA, VCE = VGE
VCE = 0.8 • VCES VGE = 0 V VCE = 0 V, VGE = ±20 V IC = IC90, VGE = 15 V
Advantages • Easy to mount with 1 screw (isolated mounting screw hole) • Reduces assembly time and cost • High power density
©1997 IXYS Corporation. All rights reserved.
96524A (5/97)
IXGK80N60A
Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 30 50 400 IC = IC90, VGE = 15 V, VCE = 0.5 VCES 70 160 8000 VCE = 25 V, VGE = 0 V, f = 1 MHz 860 200 Inductive load, TJ = 25°C IC = IC90, VGE = 15 V, L = 100 µ H, VCE = 0.8 V CES, RG = Roff = 2.7 Ω Remarks: Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ or increased RG Inductive load, TJ = 125° C IC = IC90, VGE = 15 V, L = 100 µH VCE = 0.8 V CES, RG = Roff = 2.7 Ω Remarks: Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ or increased RG S nC nC nC pF pF pF TO-264 AA Outline
gfs Qg Qge Qgc Cies Coes Cres td(on) tri td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff RthJC RthCK
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I C = 40A; VCE = 10 V, Pulse test, t ≤ 300 µ s, duty cycle ≤ 2 %
50 210 300 350 10 50 240 3 400 600 15 500 12.5
ns ns ns ns mJ ns ns mJ ns ns mJ 0.25 K/W
0.15
K/W
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025
.