IRFR120N. FR120N Datasheet

FR120N IRFR120N. Datasheet pdf. Equivalent

FR120N Datasheet
Recommendation FR120N Datasheet
Part FR120N
Description IRFR120N
Feature FR120N; IRFR120, IRFU120 Data Sheet January 2002 8.4A, 100V, 0.270 Ohm, N-Channel Power MOSFETs www.datashe.
Manufacture Fairchild Semiconductor
Datasheet
Download FR120N Datasheet





Fairchild Semiconductor FR120N
Data Sheet
IRFR120, IRFU120
January 2002
8.4A, 100V, 0.270 Ohm, N-Channel
Power MOSFETs
www.Tdahteasseheaerte4uN.c-oCmhannel enhancement mode silicon gate
power field effect transistors. They are advanced power
MOSFETs designed, tested, and guaranteed to withstand a
specified level of energy in the breakdown avalanche mode
of operation. All of these power MOSFETs are designed for
applications such as switching regulators, switching
convertors, motor drivers, relay drivers, and drivers for high
power bipolar switching transistors requiring high speed and
low gate drive power. These types can be operated directly
from integrated circuits.
Formerly developmental type TA09594.
Ordering Information
PART NUMBER
PACKAGE
BRAND
IRFR120
TO-252AA
IFR120
IRFU120
TO-251AA
IFU120
NOTE: When ordering, use the entire part number. Add the suffix T to
obtain the TO-252AA variant in the tape and reel, i.e., IRFR120T.
Packaging
JEDEC TO-251AA
SOURCE
DRAIN
GATE
DRAIN (FLANGE)
Features
• 8.4A, 100V
• rDS(ON) = 0.270
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
JEDEC TO-252AA
GATE
DRAIN
(FLANGE)
DRAIN
SOURCE
©2002 Fairchild Semiconductor Corporation
IRFR120, IRFU120 Rev. B



Fairchild Semiconductor FR120N
IRFR120, IRFU120
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
www.GdaattaesthoeSeto4uur.cceomVoltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Single Pulse Avalanche Energy Rating (Figure 14). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Techbrief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg
IRFR120, IRFU120
100
100
8.4
5.9
34
±20
50
0.33
36
-55 to 175
300
260
UNITS
V
V
A
A
A
V
W
W/oC
mJ
oC
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 150oC.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
Drain to Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
On-State Drain Current (Note 2)
Gate to Source Leakage Current
Drain to Source On Resistance (Note 2)
Forward Transconductance (Note 2)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
(Gate to Source + Gate to Drain)
Gate to Source Charge
Gate to Drain “Miller” Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Internal Drain Inductance
Internal Source Inductance
BVDSS
VGS(TH)
IDSS
ID(ON)
IGSS
rDS(ON)
gfs
td(ON)
tr
td(OFF)
tf
Qg(TOT)
Qgs
Qgd
CISS
COSS
CRSS
LD
LS
ID = 250µA, VGS = 0V (Figure 10)
VGS = VDS, ID = 250µA
VDS = Rated BVDSS, VGS = 0V
VDS = 0.8 x Rated BVDSS, VGS = 0V, TJ = 150oC
VDS > ID(ON) x rDS(ON)MAX, VGS = 10V
VGS = ±20V
ID = 5.9A, VGS = 10V (Figures 8, 9)
VDS 50V, ID = 5.9A (Figure 12)
VDD = 50V, ID 8.4A, RGS = 18, RL = 5.1
MOSFET Switching Times are Essentially
Independent of Operating Temperature
VGS = 10V, ID = 8.4A, VDS = 0.8 x Rated BVDSS,
IG(REF) = 1.5mA (Figure 14) Gate Charge is
Essentially Independent of Operating Temperature
VDS = 25V, VGS = 0V, f = 1MHz (Figure 11)
Measured from the Drain
Lead, 6.0mm (0.25in) from
Package to Center of Die
Measured from the Source
Lead, 6.0mm (0.25in) from
Package to Source
Bonding Pad
Modified MOSFET
Symbol Showing the
Internal Device
Inductances
D
LD
G
LS
MIN TYP MAX UNITS
100 - - V
2.0 - 4.0 V
- - 25 µA
- - 250 µA
8.4 - - A
- - ±500 nA
- 0.25 0.27
2.8 4.2
-
S
- 8.8 13 ns
- 30 45 ns
- 19 29 ns
- 20 30 ns
- 9.7 15 nC
- 2.2 3.3 nC
- 2.3 3.4 nC
- 350 -
pF
- 130 -
pF
- 24 - pF
- 4.5 -
nH
- 7.5 -
nH
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
RθJC
RθJA
Typical Solder Mount
S
- - 3.0 oC/W
- - 110 oC/W
©2002 Fairchild Semiconductor Corporation
IRFR120, IRFU120 Rev. B



Fairchild Semiconductor FR120N
IRFR120, IRFU120
Source to Drain Diode Specifications
PARAMETER
Continuous Source to Drain Current
Pulse Source to Drain Current (Note 3)
www.datasheet4u.com
SYMBOL
ISD
ISDM
TEST CONDITIONS
Modified MOSFET
Symbol Showing the
Integral Reverse P-N
Junction Rectifier
G
D
MIN TYP MAX UNITS
- - 8.4 A
- - 34 A
Source to Drain Diode Voltage (Note 2)
Reverse Recovery Time
Reverse Recovery Charge
VSD
trr
QRR
S
TJ = 25oC, ISD = 8.4A, VGS = 0V (Figure 13)
TJ = 25oC, ISD = 8.4A, dISD/dt = 100A/µs
TJ = 25oC, ISD = 8.4A, dISD/dt = 100A/µs
-
55
0.25
-
110
0.53
NOTES:
2. Pulse test: pulse width 300µs, duty cycle 2%.
3. Repetitive rating: pulse width limited by Max junction temperature. See Transient Thermal Impedance curve (Figure 3).
4. VDD = 25V, starting TJ = 25oC, L = 770µH, RG = 25, Peak IAS = 8.4A.
2.5
240
1.1
V
ns
µC
Typical Performance Curves Unless Otherwise Specified
1.2
1.0
0.8
0.6
0.4
0.2
0
0 25 50 75 100 125 150 175
TC, CASE TEMPERATURE (oC)
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
10
8
6
4
2
0
25 50 75 100 125 150 175
TC, CASE TEMPERATURE (oC)
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
10
0.5
1
0.2
0.1
0.05
0.1 0.02
0.01
10-120-5
PDM
SINGLE PULSE
10-4
10-3
10-2
0.1
t1, RECTANGULAR PULSE DURATION (s)
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC + TC
1
FIGURE 3. MAXIMUM TRANSIENT THERMAL IMPEDANCE
10
©2002 Fairchild Semiconductor Corporation
IRFR120, IRFU120 Rev. B





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