HGTG11N120CN. 11N120CN Datasheet

11N120CN HGTG11N120CN. Datasheet pdf. Equivalent

Part 11N120CN
Description HGTG11N120CN
Feature HGTG11N120CN, HGTP11N120CN, HGT1S11N120CNS Data Sheet December 2001 43A, 1200V, NPT Series N-Channe.
Manufacture Fairchild Semiconductor
Datasheet
Download 11N120CN Datasheet



11N120CN
Data Sheet
HGTG11N120CN, HGTP11N120CN,
HGT1S11N120CNS
December 2001
43A, 1200V, NPT Series N-Channel IGBT
The HGTG11N120CN, HGTP11N120CN, and
www.HdaGtaTs1hSee1t14Nu.1c2om0CNS are Non-Punch Through (NPT) IGBT
designs. They are new members of the MOS gated high
voltage switching IGBT family. IGBTs combine the best
features of MOSFETs and bipolar transistors. This device
has the high input impedance of a MOSFET and the low on-
state conduction loss of a bipolar transistor.
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.
Formerly Developmental Type TA49291.
Ordering Information
PART NUMBER
PACKAGE
BRAND
HGTG11N120CN
TO-247
G11N120CN
HGTP11N120CN
TO-220AB
11N120CN
HGT1S11N120CNS TO-263AB
11N120CN
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-263AB variant in Tape and Reel, i.e.,
HGT1S11N120CNS9A.
Symbol
C
Features
• 43A, 1200V, TC = 25oC
• 1200V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . 340ns at TJ = 150oC
• Short Circuit Rating
• Low Conduction Loss
• Avalanche Rated
Thermal Impedance SPICE Model
Temperature Compensating SABER™ Model
www.fairchildsemi.com
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Packaging
JEDEC STYLE TO-247
COLLECTOR
(BOTTOM SIDE
METAL)
E
C
G
JEDEC TO-220AB (ALTERNATE VERSION)
G
E
COLLECTOR
(FLANGE)
E
C
G
JEDEC TO-263AB
COLLECTOR
G (FLANGE)
E
FAIRCHILD SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,417,385
4,430,792
4,443,931
4,466,176
4,516,143
4,532,534
4,587,713
4,598,461
4,605,948
4,620,211
4,631,564
4,639,754
4,639,762
4,641,162
4,644,637
4,682,195
4,684,413
4,694,313
4,717,679
4,743,952
4,783,690
4,794,432
4,801,986
4,803,533
4,809,045
4,809,047
4,810,665
4,823,176
4,837,606
4,860,080
4,883,767
4,888,627
4,890,143
4,901,127
4,904,609
4,933,740
4,963,951
4,969,027
©2001 Fairchild Semiconductor Corporation
HGTG11N120CN, HGTP11N120CN, HGT1S11N120CNS Rev. B



11N120CN
HGTG11N120CN, HGTP11N120CN, HGT1S11N120CNS
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCES
Collector Current Continuous
At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25
www.daAtatsThCee=t41u1.0cooCm . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM
Switching Safe Operating Area at TJ = 150oC (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA
Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Forward Voltage Avalanche Energy (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAV
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Lead Temperature for Soldering
Leads at 0.063in (1.6mm) from case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, see Tech brief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg
Short Circuit Withstand Time (Note 3) at VGE = 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . tSC
Short Circuit Withstand Time (Note 3) at VGE = 12V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . tSC
HGTG11N120CN
HGTP11N120CN
HGT1S11N120CNS
1200
43
22
80
±20
±30
55A at 1200V
298
2.38
80
-55 to 150
300
260
8
15
UNITS
V
A
A
A
V
V
W
W/oC
mJ
oC
oC
oC
µs
µs
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. Pulse width limited by maximum junction temperature.
2. ICE = 20A, L = 400µH, TJ = 25oC.
3. VCE(PK) = 840V, TJ = 125oC, RG = 10.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
Collector to Emitter Breakdown Voltage
Emitter to Collector Breakdown Voltage
Collector to Emitter Leakage Current
Collector to Emitter Saturation Voltage
Gate to Emitter Threshold Voltage
Gate to Emitter Leakage Current
Switching SOA
Gate to Emitter Plateau Voltage
On-State Gate Charge
BVCES
BVECS
ICES
VCE(SAT)
VGE(TH)
IGES
SSOA
VGEP
QG(ON)
IC = 250µA, VGE = 0V
IC = 10mA, VGE = 0V
VCE = 1200V
TC = 25oC
TC = 125oC
TC = 150oC
IC = 11A,
VGE = 15V
TC = 25oC
TC = 150oC
IC = 90µA, VCE = VGE
VGE = ±20V
TJ = 150oC, RG = 10Ω, VGE = 15V,
L = 400µH, VCE(PK) = 1200V
IC = 11A, VCE = 600V
IC = 11A,
VCE = 600V
VGE = 15V
VGE = 20V
MIN
1200
15
-
-
-
-
-
6.0
-
55
TYP
-
-
-
250
-
2.1
2.8
6.8
-
-
MAX
-
-
250
-
3
2.4
3.5
-
±250
-
UNITS
V
V
µA
µA
mA
V
V
V
nA
A
- 10.4
-
V
- 100 120 nC
- 130 150 nC
©2001 Fairchild Semiconductor Corporation
HGTG11N120CN, HGTP11N120CN, HGT1S11N120CNS Rev. B





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