Document
2SC5585F
Elektronische Bauelemente
RoHS Compliant Product www.datasheet4u.com
High Current Low VCE(sat) - VCE(sat)İ 250mV at IC = 200mA/IB=10mA A
NPN Silicon General Purpose Transistor
FEATURES
SOT-523 Dim A B C D
S
2 3 Top View 1
Min 1.50 0.78 0.80 0.28 0.90 0.00 0.10 0.35 0.49 1.50
Max 1.70 0.82 0.82 0.32 1.10 0.10 0.20 0.41 0.51 1.70
MARKING CODE
BX
L B
G H J K L S
D
3. Collector 2. Base
G C J K
1. Emitter
H
All Dimension in mm
Maximum Ratings (Ta=25 o C unless otherwise specified)
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (continuous) Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Value 15 12 6 0.5 0.15 -55~+150 -55~+150 Unit V V V A W
o o
C C
Electrical Characteristics (Tamb=25 o C unless otherwise specified)
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current DC current gain Collector-emitter saturation voltage
Transition frequency
Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE VCE(sat) fT Cob
Min. 15 12 6
Typ.
Max.
Unit V V V μA μA
Conditions IC=10 μA, IE=0 IC=1mA, IB=0 IE=10 μA, IC=0 VCB=15V, IE=0 VEB= 6V, IC=0 VCE=2V, IC=10mA
0.1 0.1 270 680 0.25 320 7.5
V MHz pF
IC=200mA, IB=10mA VCE=2V, IC=10mA, f=100MHz VCB=10V, IE=0, f=1MHz
Collector Output capacitance
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 1 of 2
2SC5585F
Elektronische Bauelemente
NPN Silicon General Purpose Transistor
www.datasheet4u.com z(OHFWULFDO CKDUDFWHULVWLF CXUYHV
http://www.SeCoSGmbH.com
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 2 of 2
.