POWER TRANSISTOR. BUH713 Datasheet

BUH713 TRANSISTOR. Datasheet pdf. Equivalent

Part BUH713
Description SILICON POWER TRANSISTOR
Feature SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BUH713 www.datasheet4.
Manufacture SavantIC
Datasheet
Download BUH713 Datasheet



BUH713
SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
BUH713
DESCRIPTION
www.dat·aWshiethet4TuO.co-3mPML package
·High voltage,high speed
APPLICATIONS
·Horizontal deflection for colour TV’s
and monitors.
·Switching mode power supplies
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector
Emitter
Fig.1 simplified outline (TO-3PML) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
VCBO
VCEO
Collector-base voltage
Collector-emitter voltage
VEBO
Emitter-base voltage
IC Collector current (DC)
ICM Collector current (Pulse)
IB Base current (DC)
IBM Base current (Pulse)
Ptot Total power dissipation
Tj Operating junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal resistance from junction to case
VALUE
1300
700
10
10
20
5
10
57
150
-65~150
UNIT
V
V
V
A
A
A
A
W
MAX
2.2
UNIT
/W



BUH713
SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
BUH713
CHARACTERISTICS
Tj=25 unless otherwise specified
www.datasheet4u.com
SYMBOL
PARAMETER
CONDITIONS
VCEO(sus) Collector-emitter sustaining voltage IC=100mA
VEBO
Emitter-base breakdown voltage
IE=10mA
VCEsat Collector-emitter saturation voltage IC=7A ;IB=1.5A
VBEsat
Base-emitter saturation voltage
ICES Collector cut-off current
IEBO Emitter cut-off current
IC=7A ;IB=1.5A
VCE=1300V; VBE=0
Tj=125
VEB=5V; IC=0
hFE DC current gain
IC=7A ; VCE=5V
Switching times
ts Storage time
tf Fall time
IC=7A;IB1=1.5A;IB2=3.5A;
VCC=400V
MIN TYP. MAX UNIT
700 V
10 V
1.5 V
1.3 V
1
2
mA
100 µA
8
2.1 3.1
140 210
µs
ns
2





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