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BUH713

SavantIC

SILICON POWER TRANSISTOR

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BUH713 www.datasheet4u.com DESCRIPTION ·...


SavantIC

BUH713

File Download Download BUH713 Datasheet


Description
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BUH713 www.datasheet4u.com DESCRIPTION ·With TO-3PML package ·High voltage,high speed APPLICATIONS ·Horizontal deflection for colour TV’s and monitors. ·Switching mode power supplies PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-3PML) and symbol DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB IBM Ptot Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current (Pulse) Base current (DC) Base current (Pulse) Total power dissipation Operating junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE 1300 700 10 10 20 5 10 57 150 -65~150 UNIT V V V A A A A W THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case MAX 2.2 UNIT /W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=100mA IE=10mA IC=7A ;IB=1.5A IC=7A ;IB=1.5A VCE=1300V; VBE=0 Tj=125 VEB=5V; IC=0 IC=7A ; VCE=5V 8 MIN 700 10 TYP. www.datasheet4u.com BUH713 SYMBOL VCEO(sus) VEBO VCEsat VBEsat ICES IEBO hFE MAX UNIT V V 1.5 1.3 1 2 100 V V m...




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