BUL510

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO-220C package www.datasheet4u.com ·High voltage,high speed APPLICATIONS ·Electronic ballasts for fluorescent lighting ·Switch mode power supplies ·Electronic transformer for halogen lamp PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION BUL510 Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB IBM Ptot Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-Peak Base current (DC) Base current-Peak Total power dissipation Maximum operating junction temperature Storage temperature tp<5ms TC=25 tp<5ms CONDITIONS Open emitter Open base Open collector VALUE 1000 450 9 10 18 3.5 7 100 150 -65~150 UNIT V V V A A A A W THERMAL CHARACTERISTICS SYMBOL Rth j-case PARAMETER Thermal resistance junction to case VALUE 1.25 UNIT /W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Emitter-base breakdwon voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current DC current gain DC current gain CONDITIONS IC=100mA ; IB=0; L=25mH IE=10mA ;IC=0 IC=3A; IB=0.6A IC=4A ;IB=0.8A IC=5A ;IB=1.25...